A new discretization strategy of the semiconductor equations comprising momentum and energy balance A Forghieri, R Guerrieri, P Ciampolini, A Gnudi, M Rudan, G Baccarani IEEE transactions on computer-aided design of integrated circuits and …, 1988 | 240 | 1988 |
Multi‐dimensional discretization scheme for the hydrodynamic model of semiconductor devices M Rudan, F Odeh COMPEL-The international journal for computation and mathematics in …, 1986 | 213 | 1986 |
Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility S Reggiani, M Valdinoci, L Colalongo, M Rudan, G Baccarani, AD Stricker, ... IEEE Transactions on Electron devices 49 (3), 490-499, 2002 | 156 | 2002 |
HFIELDS: A highly flexible 2-D semiconductor-device analysis program G Baccarani Proc. of the NASECODE IV Conference, 3-12, 1985 | 112 | 1985 |
Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE MC Vecchi, M Rudan IEEE Transactions on Electron Devices 45 (1), 230-238, 1998 | 105 | 1998 |
Low-field electron mobility model for ultrathin-body SOI and double-gate MOSFETs with extremely small silicon thicknesses S Reggiani, E Gnani, A Gnudi, M Rudan, G Baccarani IEEE Transactions on Electron Devices 54 (9), 2204-2212, 2007 | 100 | 2007 |
Band-structure effects in ultrascaled silicon nanowires E Gnani, S Reggiani, A Gnudi, P Parruccini, R Colle, M Rudan, ... IEEE Transactions on Electron Devices 54 (9), 2243-2254, 2007 | 96 | 2007 |
Numerical solution of the hydrodynamic model for a one‐dimensional semiconductor device M Rudan, F Odeh, J White COMPEL-The international journal for computation and mathematics in …, 1987 | 93 | 1987 |
Physics of semiconductor devices M Rudan Springer, 2015 | 91 | 2015 |
Analytical IGFET model including drift and diffusion currents G Baccarani, M Rudan, G Spadini IEE Journal on Solid-State and Electron Devices 2 (2), 62-68, 1978 | 91 | 1978 |
Investigation of non‐local transport phenomena in small semiconductor devices A Gnudi, F Odeh, M Rudan European Transactions on Telecommunications 1 (3), 307-312, 1990 | 76 | 1990 |
Coherent electron transport in bent cylindrical surfaces A Marchi, S Reggiani, M Rudan, A Bertoni Physical Review B 72 (3), 035403, 2005 | 75 | 2005 |
Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge2Sb2Te5 chalcogenide from first-principle calculations T Tsafack, E Piccinini, BS Lee, E Pop, M Rudan Journal of Applied Physics 110 (6), 2011 | 74 | 2011 |
Analysis of conductivity degradation in gold/platinum-doped silicon M Valdinoci, L Colalongo, A Pellegrini, M Rudan IEEE Transactions on Electron Devices 43 (12), 2269-2275, 1996 | 74 | 1996 |
Physical models for numerical device simulation G Baccarani, M Rudan, R Guerrieri, P Ciampolini Process and device modeling, 107-158, 1986 | 73 | 1986 |
Impact ionization within the hydrodynamic approach to semiconductor transport W Quade, E Schöll, M Rudan Solid-state electronics 36 (10), 1493-1505, 1993 | 68 | 1993 |
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs A Marchi, E Gnani, S Reggiani, M Rudan, G Baccarani Solid-State Electronics 50 (1), 78-85, 2006 | 66 | 2006 |
Impact-ionization in silicon at large operating temperature M Valdinoci, D Ventura, MC Vecchi, M Rudan, G Baccarani, F Illien, ... 1999 International Conference on Simulation of Semiconductor Processes and …, 1999 | 65 | 1999 |
Band-structure calculations of SiO/sub 2/by means of Hartree-Fock and density-functional techniques E Gnani, S Reggiani, R Colle, M Rudan IEEE Transactions on electron devices 47 (10), 1795-1803, 2000 | 59 | 2000 |
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures S Reggiani, E Gnani, M Rudan, G Baccarani, C Corvasce, D Barlini, ... IEEE transactions on electron devices 52 (10), 2290-2299, 2005 | 55 | 2005 |