| Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors Y Jia, Z Shi, W Hou, H Zang, K Jiang, Y Chen, S Zhang, Z Qi, T Wu, X Sun, ... npj 2D Materials and Applications 4 (1), 1-7, 2020 | 21 | 2020 |
| Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles ZM Shi, XJ Sun, YP Jia, XK Liu, SL Zhang, ZB Qi, DB Li SCIENCE CHINA Physics, Mechanics & Astronomy 62 (12), 1-7, 2019 | 12 | 2019 |
| Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission Z Shi, Z Qi, H Zang, K Jiang, Y Chen, Y Jia, T Wu, S Zhang, X Sun, D Li ACS Applied Materials & Interfaces 13 (31), 37380-37387, 2021 | 8 | 2021 |
| Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Y Wang, Z Zhang, L Guo, Y Chen, Y Li, Z Qi, J Ben, X Sun, D Li Nanomaterials 11 (12), 3328, 2021 | 6 | 2021 |
| Morphology and carrier mobility of high-B-content B x Al 1− x N ternary alloys from an ab initio global search Z Qi, Z Shi, H Zang, X Ma, Y Yang, Y Jia, K Jiang, X Sun, D Li Nanoscale 14 (31), 11335-11342, 2022 | 2 | 2022 |
| Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN W Hou, Z Qi, H Zang, Y Yan, Z Shi International Journal of Smart and Nano Materials 11 (3), 288-297, 2020 | | 2020 |
