Alvaro Padilla
Alvaro Padilla
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Cited by
Cited by
Phase change memory technology
GW Burr, MJ Breitwisch, M Franceschini, D Garetto, K Gopalakrishnan, ...
Journal of Vacuum Science & Technology B 28 (2), 223-262, 2010
Access devices for 3D crosspoint memory
GW Burr, RS Shenoy, K Virwani, P Narayanan, A Padilla, B Kurdi, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages
A Padilla, CW Yeung, C Shin, C Hu, TJK Liu
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Multi-bit-per-cell nvm structures and architecture
A Padilla, TJ King
US Patent App. 11/609,846, 2007
Nanoscale electronic synapses using phase change devices
BL Jackson, B Rajendran, GS Corrado, M Breitwisch, GW Burr, R Cheek, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-20, 2013
Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield
GW Burr, K Virwani, RS Shenoy, A Padilla, M BrightSky, EA Joseph, ...
2012 Symposium on VLSI Technology (VLSIT), 41-42, 2012
Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5
GW Burr, P Tchoulfian, T Topuria, C Nyffeler, K Virwani, A Padilla, ...
Journal of Applied Physics 111 (10), 104308, 2012
Sub-30nm scaling and high-speed operation of fully-confined access-devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
K Virwani, GW Burr, RS Shenoy, CT Rettner, A Padilla, T Topuria, ...
2012 International Electron Devices Meeting, 2.7. 1-2.7. 4, 2012
Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
A Padilla, GW Burr, CT Rettner, T Topuria, PM Rice, B Jackson, K Virwani, ...
Journal of Applied Physics 110 (5), 054501, 2011
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
RS Shenoy, GW Burr, K Virwani, B Jackson, A Padilla, P Narayanan, ...
Semiconductor Science and Technology 29 (10), 104005, 2014
Programming characteristics of the steep turn-on/off feedback FET (FBFET)
CW Yeung, A Padilla, TJK Liu, C Hu
2009 Symposium on VLSI Technology, 176-177, 2009
Evidence of crystallization–induced segregation in the phase change material Te-rich GST
A Debunne, K Virwani, A Padilla, GW Burr, AJ Kellock, VR Deline, ...
Journal of The Electrochemical Society 158 (10), H965, 2011
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
RS Shenoy, K Gopalakrishnan, B Jackson, K Virwani, GW Burr, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 94-95, 2011
Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection
A Padilla, TJK Liu
2007 International Symposium on VLSI Technology, Systems and Applications …, 2007
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
A Padilla, GW Burr, K Virwani, A Debunne, CT Rettner, T Topuria, ...
2010 International Electron Devices Meeting, 29.4. 1-29.4. 4, 2010
Exploring the design space for crossbar arrays built with mixed-ionic-electronic-conduction (MIEC) access devices
P Narayanan, GW Burr, RS Shenoy, S Stephens, K Virwani, A Padilla, ...
IEEE Journal of the Electron Devices Society 3 (5), 423-434, 2015
The inner workings of phase change memory: Lessons from prototype PCM devices
GW Burr, A Padilla, M Franceschini, B Jackson, DG Dupouy, CT Rettner, ...
2010 IEEE Globecom Workshops, 1890-1894, 2010
Recovery dynamics and fast (sub-50ns) read operation with access devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC)
GW Burr, K Virwani, RS Shenoy, G Fraczak, CT Rettner, A Padilla, ...
2013 Symposium on VLSI Technology, T66-T67, 2013
Enhanced endurance of dual-bit SONOS NVM cells using the GIDL read method
A Padilla, S Lee, D Carlton, TJK Liu
2008 Symposium on VLSI Technology, 142-143, 2008
On the Origin of Steep Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices
A Padilla, GW Burr, RS Shenoy, KV Raman, DS Bethune, RM Shelby, ...
IEEE Transactions on Electron Devices 62 (3), 963-971, 2015
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