| Short-circuit capability prediction and failure mode of asymmetric and double trench SiC MOSFETs X Deng, X Li, X Li, H Zhu, X Xu, Y Wen, Y Sun, W Chen, Z Li, B Zhang IEEE Transactions on Power Electronics 36 (7), 8300-8307, 2020 | 28 | 2020 |
| A drain–source connection technique: Thermal resistance measurement method for GaN HEMTs using TSEP at high voltage X Li, S Feng, C Liu, Y Zhang, K Bai, Y Xiao, X Zheng, X He, S Pan, G Lin, ... IEEE Transactions on Electron Devices 67 (12), 5454-5459, 2020 | 18 | 2020 |
| Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method S Pan, S Feng, X Li, X Zheng, X Lu, C Hu, X He, K Bai, L Zhou, Y Zhang Semiconductor Science and Technology 36 (9), 095011, 2021 | 6 | 2021 |
| Identifying the traps in the channel region in GaN-based HEMTs using a nonmonotone drain current transient X Zheng, S Feng, Y Zhang, X Li, K Bai IEEE Transactions on Device and Materials Reliability 19 (3), 509-513, 2019 | 6 | 2019 |
| Design, fabrication and characterization of 6.5 kV/100A 4H-SiC PiN power rectifier M Tao, X Deng, R Hu, X Li, Z Li, H Lu 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2021 | 4 | 2021 |
| An improved composite JTE termination technique for ultrahigh voltage 4H-SiC power devices R Hu, X Deng, XJ Xu, X Li, J Li, Z Li, Y Zhang, B Zhang 2019 16th China International Forum on Solid State Lighting & 2019 …, 2019 | 4 | 2019 |
| Effects of temperature and bias voltage on electron transport properties in GaN high-electron-mobility transistors S Pan, S Feng, X Zheng, X He, X Li, K Bai IEEE Transactions on Device and Materials Reliability 21 (4), 494-499, 2021 | 3 | 2021 |
| Effect of high-and low-side blocking on short-circuit characteristics of SiC MOSFET K Bai, S Feng, X Zheng, X He, S Pan, X Li Microelectronics Reliability 123, 114227, 2021 | 3 | 2021 |
| Effect of surface roughness on thermal contact resistance of fixed interface in thermal measurement of electron device Y Chen, S Feng, Y Zhang, X He, K Bai, X Li 2020 3rd International Conference on Electron Device and Mechanical …, 2020 | 3 | 2020 |
