| Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2‐Based Ferroelectric/Dielectric Heterostructures M Hoffmann, M Gui, S Slesazeck, R Fontanini, M Segatto, D Esseni, ... Advanced Functional Materials 32 (2), 2108494, 2022 | 35 | 2022 |
| Modeling and design of FTJs as multi-level low energy memristors for neuromorphic computing R Fontanini, M Segatto, M Massarotto, R Specogna, F Driussi, M Loghi, ... IEEE Journal of the Electron Devices Society 9, 1202-1209, 2021 | 32 | 2021 |
| Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions R Fontanini, J Barbot, M Segatto, S Lancaster, Q Duong, F Driussi, ... IEEE Journal of the Electron Devices Society 10, 593-599, 2022 | 16 | 2022 |
| Charge-trapping-induced compensation of the ferroelectric polarization in FTJs: Optimal conditions for a synaptic device operation R Fontanini, M Segatto, KS Nair, M Holzer, F Driussi, I Häusler, CT Koch, ... IEEE Transactions on Electron Devices 69 (7), 3694-3699, 2022 | 11 | 2022 |
| Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures M Segatto, R Fontanini, F Driussi, D Lizzit, D Esseni IEEE Journal of the Electron Devices Society 10, 324-333, 2022 | 8 | 2022 |
| Polarization switching and interface charges in BEOL compatible ferroelectric tunnel junctions R Fontanini, J Barbot, M Segatto, S Lancaster, Q Duong, F Driussi, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 8 | 2021 |
| Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions M Massarotto, M Segatto, F Driussi, A Affanni, S Lancaster, S Slesazeck, ... 2023 35th International Conference on Microelectronic Test Structure (ICMTS …, 2023 | 4 | 2023 |
| Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions M Segatto, M Massarotto, S Lancaster, QT Duong, A Affanni, R Fontanini, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 3 | 2022 |
| Modeling 1/f and Lorenzian noise in III-V MOSFETs E Caruso, F Bettetti, L Del Linz, D Pin, M Segatto, P Palestri 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 2 | 2019 |
| Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO M Segatto, F Rupil, D Esseni IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions J Barbot, R Fontanini, M Segatto, J Coignus, F Triozon, C Carabasse, ... Journal of Applied Physics 134 (21), 2023 | | 2023 |
| Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices D Esseni, F Driussi, D Lizzit, M Massarotto, M Segatto 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | | 2023 |
| Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes S Lancaster, M Segatto, C Silva, B Max, T Mikolajick, D Esseni, F Driussi, ... 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
Riccardo FontaniniInfineon, Università degli Studi di UdineVerified email at infineon.com
