| Device electrostatics and high temperature operation of oxygen terminated boron doped diamond MOS capacitor and MOSFET Y Pullaiah, NK Emani, K Nayak 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 4 | 2020 |
| TCAD Analysis of O-Terminated Diamond m-i-p+ Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States Y Pullaiah, M Bajaj, O Badami, K Nayak IEEE Transactions on Electron Devices 69 (1), 271-277, 2021 | 2 | 2021 |
| Electrode Orientation Dependent Transition Metal—(MoS₂; WS₂) Contact Analysis for 2D Material Based FET Applications K Prashant, D Gupta, Y Pullaiah, O Badami, K Nayak IEEE Electron Device Letters 42 (12), 1878-1881, 2021 | 2 | 2021 |
| Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals K Prashant, P Yerragudi, D Gupta, K Nayak 2020 IEEE International Interconnect Technology Conference (IITC), 64-66, 2020 | 2 | 2020 |
Oves BadamiIndian Institute of Technology HyderabadVerified email at ee.iith.ac.in
