| Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4 Y Jang, S Hong, J Seo, H Cho, K Char, Z Galazka Applied Physics Letters 116 (20), 2020 | 27 | 2020 |
| High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface H Cho, D Song, Y Kim, B Kim, K Char ACS Applied Electronic Materials 4 (1), 356-366, 2021 | 16 | 2021 |
| Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals Z Galazka, K Irmscher, S Ganschow, M Zupancic, W Aggoune, C Draxl, ... physica status solidi (a) 218 (16), 2100016, 2021 | 15 | 2021 |
| Transport Properties of the Interface Analyzed by Poisson-Schrödinger Equation Y Kim, S Kim, H Cho, YM Kim, H Ohta, K Char Physical Review Applied 17 (1), 014031, 2022 | 10 | 2022 |
| Confinement of Electrons at the LaInO3/BaSnO3 Heterointerface D Pfützenreuter, S Kim, H Cho, O Bierwagen, M Zupancic, M Albrecht, ... Advanced Materials Interfaces 9 (35), 2201279, 2022 | 8 | 2022 |
| Fermi level pinning and band bending in δ-doped BaSnO3 Y Kim, H Cho, K Char Applied Physics Letters 118 (5), 2021 | 3 | 2021 |
| Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3 J Lee, H Cho, B Kim, M Jeong, K Lee, K Char Applied Physics Letters 121 (14), 2022 | 2 | 2022 |
| Critical Role of Terminating Layer in Formation of 2DEG State at the LaInO3/BaSnO3 Interface S Kim, M Lippmaa, J Lee, H Cho, J Kim, B Kim, K Char Advanced Materials Interfaces 9 (32), 2201781, 2022 | | 2022 |
| Effect of perovskite dielectric BaxSr1-xHfO3 on BaSnO3 H Cho, YM Kim, K Char APS March Meeting Abstracts 2019, P45. 015, 2019 | | 2019 |
