A novel ultrathin elevated channel low-temperature poly-Si TFT S Zhang, C Zhu, JKO Sin, PKT Mok IEEE Electron Device Letters 20 (11), 569-571, 1999 | 675 | 1999 |
A stacked CMOS technology on SOI substrate S Zhang, R Han, X Lin, X Wu, M Chan IEEE Electron Device Letters 25 (9), 661-663, 2004 | 254 | 2004 |
Local clustering 3-D stacked CMOS technology for interconnect loading reduction X Lin, S Zhang, X Wu, M Chan IEEE Transactions on electron Devices 53 (6), 1405-1410, 2006 | 232 | 2006 |
Solution-processed MoS2/organolead trihalide perovskite photodetectors Y Wang, R Fullon, M Acerce, CE Petoukhoff, J Yang, C Chen, S Du, ... Adv. Mater 29 (4), 1603995, 2017 | 227 | 2017 |
3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies M Chan, S Zhang, X Lin, X Wu, PCH Chan TENCON 2006-2006 IEEE Region 10 Conference, 1-4, 2006 | 215 | 2006 |
Efficient quantum dot light-emitting diodes with a Zn 0.85 Mg 0.15 O interfacial modification layer Y Sun, Y Jiang, H Peng, J Wei, S Zhang, S Chen Nanoscale 9 (26), 8962-8969, 2017 | 165 | 2017 |
Beyond OLED: Efficient quantum dot light‐emitting diodes for display and lighting application Y Sun, Y Jiang, XW Sun, S Zhang, S Chen The Chemical Record 19 (8), 1729-1752, 2019 | 135 | 2019 |
Investigation on thermally induced efficiency roll-off: toward efficient and ultrabright quantum-dot light-emitting diodes Y Sun, Q Su, H Zhang, F Wang, S Zhang, S Chen ACS nano 13 (10), 11433-11442, 2019 | 124 | 2019 |
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices S Zhang, JKO Sin, TML Lai, PK Ko IEEE Transactions on Electron Devices 46 (5), 1036-1041, 1999 | 119 | 1999 |
Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass S Zhang, C Zhu, JKO Sin, JN Li, PKT Mok IEEE Transactions on Electron Devices 47 (3), 569-575, 2000 | 116 | 2000 |
Flexible and stable quasi-solid-state zinc ion battery with conductive guar gum electrolyte Y Huang, J Zhang, J Liu, Z Li, S Jin, Z Li, S Zhang, H Zhou Materials Today Energy 14, 100349, 2019 | 109 | 2019 |
Flexible quasi-solid-state zinc ion batteries enabled by highly conductive carrageenan bio-polymer electrolyte Y Huang, J Liu, J Zhang, S Jin, Y Jiang, S Zhang, Z Li, C Zhi, G Du, ... RSC advances 9 (29), 16313-16319, 2019 | 101 | 2019 |
Photoreactive and metal-platable copolymer inks for high-throughput, room-temperature printing of flexible metal electrodes for thin-film electronics Y Yu, X Xiao, Y Zhang, K Li, C Yan, X Wei, L Chen, H Zhen, H Zhou, ... Adv. Mater 28 (24), 4926-4934, 2016 | 99 | 2016 |
High-performance quantum dot light-emitting diodes based on Al-doped ZnO nanoparticles electron transport layer Y Sun, W Wang, H Zhang, Q Su, J Wei, P Liu, S Chen, S Zhang ACS applied materials & interfaces 10 (22), 18902-18909, 2018 | 96 | 2018 |
Towards printed perovskite solar cells with cuprous oxide hole transporting layers: a theoretical design Y Wang, Z Xia, J Liang, X Wang, Y Liu, C Liu, S Zhang, H Zhou Semiconductor Science and Technology 30 (5), 054004, 2015 | 88 | 2015 |
Large-area patterning of full-color quantum dot arrays beyond 1000 pixels per inch by selective electrophoretic deposition J Zhao, L Chen, D Li, Z Shi, P Liu, Z Yao, H Yang, T Zou, B Zhao, X Zhang, ... Nature Communications 12 (1), 4603, 2021 | 73 | 2021 |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ... Nanoscale 9 (25), 8586-8590, 2017 | 71 | 2017 |
Oxide semiconductor phototransistor with organolead trihalide perovskite light absorber S Du, G Li, X Cao, Y Wang, H Lu, S Zhang, C Liu, H Zhou Advanced Electronic Materials 3 (4), 1600325, 2017 | 66 | 2017 |
Method for manufacturing transistor S Zhang, X He, L Wang US Patent 9,129,992, 2015 | 65 | 2015 |
Effect of Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Shift of a-IGZO TFTs X Xiao, W Deng, S Chi, Y Shao, X He, L Wang, S Zhang IEEE transactions on electron devices 60 (12), 4159-4164, 2013 | 64 | 2013 |