GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band CH Liu, R Bansal, CW Wu, YT Jheng, GE Chang Advanced Photonics Research 3 (7), 2100330, 2022 | 12 | 2022 |
Design and optimization of GeSn waveguide photodetectors for 2-µm band Silicon photonics S Ghosh, R Bansal, G Sun, RA Soref, HH Cheng, GE Chang Sensors 22 (11), 3978, 2022 | 11 | 2022 |
Planar GeSn lateral pin resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics CY Chang, R Bansal, KC Lee, G Sun, R Soref, HH Cheng, GE Chang Optics Letters 46 (13), 3316-3319, 2021 | 6 | 2021 |
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics R Bansal, YT Jheng, KC Lee, HH Cheng, GE Chang IEEE Electron Device Letters 44 (3), 364-367, 2023 | 1 | 2023 |
Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics R Bansal, YT Jheng, KC Lee, S Wen, Y Berencén, HH Cheng, GE Chang IEEE Journal of Selected Topics in Quantum Electronics, 2024 | | 2024 |
High-performance Ge-on-insulator lateral pin waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths TY Huang, R Bansal, S Ghosh, KH Lee, Q Chen, CS Tan, GE Chang Optics Letters 49 (5), 1281-1284, 2024 | | 2024 |
Heterostructure Vertical pin GeSn Light-Emitting Diodes on Silicon-on-Insulator for 2µm Wavelength Band R Bansal, GE Chang Conference on Lasers and Electro-Optics/Pacific Rim, CWP12B_03, 2022 | | 2022 |