| Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ... Nature nanotechnology 9 (7), 548-554, 2014 | 919 | 2014 |
| Low-power non-volatile spintronic memory: STT-RAM and beyond KL Wang, JG Alzate, PK Amiri Journal of Physics D: Applied Physics 46 (7), 074003, 2013 | 622 | 2013 |
| Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ... Nano letters 16 (3), 1981-1988, 2016 | 326 | 2016 |
| Voltage-induced ferromagnetic resonance in magnetic tunnel junctions J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ... Physical review letters 108 (19), 197203, 2012 | 309 | 2012 |
| Strong Rashba-Edelstein effect-induced spin–orbit torques in monolayer transition metal dichalcogenide/ferromagnet bilayers Q Shao, G Yu, YW Lan, Y Shi, MY Li, C Zheng, X Zhu, LJ Li, PK Amiri, ... Nano letters 16 (12), 7514-7520, 2016 | 288 | 2016 |
| Room-temperature skyrmion shift device for memory application G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ... Nano letters 17 (1), 261-268, 2017 | 273 | 2017 |
| Ultralow-current-density and bias-field-free spin-transfer nano-oscillator Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ... Scientific reports 3 (1), 1426, 2013 | 246 | 2013 |
| Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ... Journal of Applied Physics 109 (7), 2011 | 240 | 2011 |
| Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ... Applied Physics Letters 108 (1), 2016 | 226 | 2016 |
| Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ... Applied Physics Letters 98 (11), 2011 | 221 | 2011 |
| Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices T Wu, A Bur, K Wong, P Zhao, CS Lynch, PK Amiri, KL Wang, GP Carman Applied Physics Letters 98 (26), 2011 | 193 | 2011 |
| Electric-field-induced spin wave generation using multiferroic magnetoelectric cells S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ... Applied Physics Letters 104 (8), 2014 | 184 | 2014 |
| Voltage-controlled magnetic anisotropy in spintronic devices PK Amiri, KL Wang Spin 2 (03), 1240002, 2012 | 182 | 2012 |
| Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 171 | 2015 |
| Giant spin-torque diode sensitivity in the absence of bias magnetic field B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ... Nature communications 7 (1), 11259, 2016 | 165 | 2016 |
| Fast and programmable locomotion of hydrogel-metal hybrids under light and magnetic fields C Li, GC Lau, H Yuan, A Aggarwal, VL Dominguez, S Liu, H Sai, ... Science robotics 5 (49), eabb9822, 2020 | 162 | 2020 |
| Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ... Physical Review B 89 (10), 104421, 2014 | 156 | 2014 |
| Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ... Applied physics letters 104 (11), 2014 | 153 | 2014 |
| High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ... ACS nano 6 (7), 6115-6121, 2012 | 147 | 2012 |
| Voltage-controlled magnetic memory element with canted magnetization KL Wang, PK Amiri, JG Alzate US Patent 9,036,407, 2015 | 126 | 2015 |
Kang L. WangElectrical Engineering Department在 ee.ucla.edu 的电子邮件经过验证
