Jin Wei
Title
Cited by
Cited by
Year
Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations
H Wang, J Wei, R Xie, C Liu, G Tang, KJ Chen
IEEE Transactions on Power Electronics 32 (7), 5539-5549, 2016
912016
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
622016
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
482015
Electric field distribution around drain-side gate edge in AlGaN/GaN HEMTs: Analytical approach
J Si, J Wei, W Chen, B Zhang
IEEE transactions on electron devices 60 (10), 3223-3229, 2013
392013
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
342017
Low ON-resistance SiC trench/planar MOSFET with reduced OFF-state oxide field and low gate charges
J Wei, M Zhang, H Jiang, CH Cheng, KJ Chen
IEEE Electron Device Letters 37 (11), 1458-1461, 2016
332016
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
302015
Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations
J Wei, M Zhang, H Jiang, H Wang, KJ Chen
IEEE Transactions on Electron Devices 64 (6), 2592-2598, 2017
292017
Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices
S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen
IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017
272017
Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode
H Jiang, J Wei, B Zhang, W Chen, M Qiao, Z Li
IEEE electron device letters 33 (12), 1684-1686, 2012
252012
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ...
IEEE Electron Device Letters 40 (4), 526-529, 2019
222019
SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss
H Jiang, J Wei, X Dai, M Ke, I Deviny, P Mawby
ieee electron device letters 37 (10), 1324-1327, 2016
212016
Proposal of a GaN/SiC hybrid field-effect transistor for power switching applications
J Wei, H Jiang, Q Jiang, KJ Chen
IEEE Transactions on Electron Devices 63 (6), 2469-2473, 2016
212016
Investigations of leakage current properties in semi-insulating GaN grown on Si (1 1 1) substrate with low-temperature AlN interlayers
Z He, Y Ni, F Yang, J Wei, Y Yao, Z Shen, P Xiang, M Liu, S Wang, ...
Journal of Physics D: Applied Physics 47 (4), 045103, 2013
202013
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
192017
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 937-940, 2017
182017
SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications
H Jiang, J Wei, X Dai, C Zheng, M Ke, X Deng, Y Sharma, I Deviny, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
152017
Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss
H Jiang, J Wei, X Dai, M Ke, C Zheng, I Deviny
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
122016
Characterization of static and dynamic behaviors in AlGaN/GaN-on-Si power transistors with photonic-ohmic drain
X Tang, B Li, Z Zhang, G Tang, J Wei, KJ Chen
IEEE Transactions on Electron Devices 63 (7), 2831-2837, 2016
122016
Dependence of Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET
M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
112018
The system can't perform the operation now. Try again later.
Articles 1–20