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Jin Wei
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Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations
H Wang, J Wei, R Xie, C Liu, G Tang, KJ Chen
IEEE Transactions on Power Electronics 32 (7), 5539-5549, 2016
2402016
Gallium nitride-based complementary logic integrated circuits
Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ...
Nature electronics 4 (8), 595-603, 2021
1332021
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ...
IEEE Electron Device Letters 40 (4), 526-529, 2019
1202019
Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
1162016
High and / Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform
Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 41 (1), 26-29, 2019
952019
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs
J He, J Wei, S Yang, Y Wang, K Zhong, KJ Chen
IEEE Transactions on Electron Devices 66 (8), 3453-3458, 2019
932019
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor
J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
912015
Low ON-resistance SiC trench/planar MOSFET with reduced OFF-state oxide field and low gate charges
J Wei, M Zhang, H Jiang, CH Cheng, KJ Chen
IEEE Electron Device Letters 37 (11), 1458-1461, 2016
832016
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
822017
Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices
S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen
IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017
782017
Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations
J Wei, M Zhang, H Jiang, H Wang, KJ Chen
IEEE Transactions on Electron Devices 64 (6), 2592-2598, 2017
742017
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
672017
SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications
H Jiang, J Wei, X Dai, C Zheng, M Ke, X Deng, Y Sharma, I Deviny, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
662017
SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss
H Jiang, J Wei, X Dai, M Ke, I Deviny, P Mawby
IEEE electron device letters 37 (10), 1324-1327, 2016
612016
Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy
S Yang, S Huang, J Wei, Z Zheng, Y Wang, J He, KJ Chen
IEEE Electron Device Letters 41 (5), 685-688, 2020
572020
Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss
H Jiang, J Wei, X Dai, M Ke, C Zheng, I Deviny
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
562016
Proposal of a GaN/SiC hybrid field-effect transistor for power switching applications
J Wei, H Jiang, Q Jiang, KJ Chen
IEEE Transactions on Electron Devices 63 (6), 2469-2473, 2016
552016
Electric field distribution around drain-side gate edge in AlGaN/GaN HEMTs: Analytical approach
J Si, J Wei, W Chen, B Zhang
IEEE transactions on electron devices 60 (10), 3223-3229, 2013
552013
GaN power IC technology on p-GaN gate HEMT platform
J Wei, G Tang, R Xie, KJ Chen
Japanese Journal of Applied Physics 59 (SG), SG0801, 2020
542020
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs
C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
502020
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