| InGaN light-emitting diodes: Efficiency-limiting processes at high injection V Avrutin, F Zhang, Ü Özgür, H Morkoç, A Matulionis Journal of Vacuum Science & Technology A 31 (5), 2013 | 50 | 2013 |
| Determination of carrier diffusion length in GaN S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ... Journal of Applied Physics 117 (1), 2015 | 49 | 2015 |
| Metal–semiconductor hybrid aerogels: Evolution of optoelectronic properties in a low-dimensional CdSe/Ag nanoparticle assembly L Nahar, RJA Esteves, S Hafiz, U Özgür, IU Arachchige ACS nano 9 (10), 9810-9821, 2015 | 47 | 2015 |
| Ultra-small Ge 1− x Sn x quantum dots with visible photoluminescence RJA Esteves, S Hafiz, DO Demchenko, Ü Özgür, IU Arachchige Chemical communications 52 (78), 11665-11668, 2016 | 46 | 2016 |
| Energy Gap Tuning and Carrier Dynamics in Colloidal Ge1–xSnx Quantum Dots SA Hafiz, RJA Esteves, DO Demchenko, IU Arachchige, U Ozgur The journal of physical chemistry letters 7 (17), 3295-3301, 2016 | 35 | 2016 |
| The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis Applied Physics Letters 103 (5), 2013 | 25 | 2013 |
| Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions X Li, S Okur, F Zhang, SA Hafiz, V Avrutin, Ü Özgür, H Morkoç, ... Applied Physics Letters 101 (4), 2012 | 21 | 2012 |
| Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ... Applied Physics Letters 106 (18), 2015 | 19 | 2015 |
| Optical Transitions and Excitonic Properties of Ge1–xSnx Alloy Quantum Dots DO Demchenko, V Tallapally, RJA Esteves, S Hafiz, TA Nakagawara, ... The Journal of Physical Chemistry C 121 (33), 18299-18306, 2017 | 18 | 2017 |
| Saga of efficiency degradation at high injection in InGaN light emitting diodes V Avrutin, SA Hafiz, F Zhang, Ü Özgür, E Bellotti, F Bertazzi, M Goano, ... Turkish Journal of Physics 38 (3), 269-313, 2014 | 15 | 2014 |
| Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature MB Ullah, V Avrutin, T Nakagawara, S Hafiz, I Altuntaş, Ü Özgür, ... Journal of Applied Physics 121 (18), 2017 | 8 | 2017 |
| GaN-based vertical cavities with all dielectric reflectors by epitaxial lateral overgrowth S Okur, R Shimada, F Zhang, SDA Hafiz, J Lee, V Avrutin, H Morkoç, ... Japanese Journal of Applied Physics 52 (8S), 08JH03, 2013 | 7 | 2013 |
| Exciton localization and large Stokes shift in quaternary BeMgZnO grown by molecular beam epitaxy M Toporkov, MB Ullah, S Hafiz, T Nakagawara, V Avrutin, H Morkoç, ... Oxide-based Materials and Devices VII 9749, 85-96, 2016 | 6 | 2016 |
| Determination of carrier diffusion length in p-and n-type GaN S Hafiz, S Metzner, F Zhang, M Monavarian, V Avrutin, H Morkoç, ... Gallium Nitride Materials and Devices IX 8986, 288-293, 2014 | 6 | 2014 |
| Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements S Hafiz, F Zhang, M Monavarian, S Okur, V Avrutin, H Morkoç, Ü Özgür Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2014 | 4 | 2014 |
| Enhancement of coherent acoustic phonons in InGaN multiple quantum wells SD Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür Gallium Nitride Materials and Devices X 9363, 315-322, 2015 | 3 | 2015 |
| Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes S Hafiz, N Andrade, M Monavarian, N Izyumskaya, S Das, F Zhang, ... Gallium Nitride Materials and Devices XI 9748, 260-265, 2016 | 2 | 2016 |
| Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers M Monavarian, S Hafiz, S Das, N Izyumskaya, Ü Özgür, H Morkoç, ... Gallium Nitride Materials and Devices XI 9748, 220-234, 2016 | 2 | 2016 |
| Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN M Monavarian, S Hafiz, N Izyumskaya, S Das, Ü Özgür, H Morkoç, ... Gallium Nitride Materials and Devices XI 9748, 249-259, 2016 | 2 | 2016 |
| Piezoelectricity Enhancement and Band Structure Modification of Single Atomic Shift in MoS Supercell Monolayer FJ Seo, S Yu, Q Rice, S Hafiz, B Tabibi, Q Li Bulletin of the American Physical Society 62, 2017 | | 2017 |
Umit OzgurVirginia Commonwealth UniversityVerified email at vcu.edu
