Wai Yuen Fu
Wai Yuen Fu
Research Assistant Professor, Electrical and Electronic Engineering, the University of Hong Kong
Verified email at - Homepage
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Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of Applied Physics 114 (13), 133510, 2013
Elastic constants and critical thicknesses of ScGaN and ScAlN
S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of applied physics 114 (24), 243516, 2013
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate
KH Li, WY Fu, YF Cheung, KKY Wong, Y Wang, KM Lau, HW Choi
Optica 5 (5), 564-569, 2018
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 072104, 2015
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
Scientific reports 7 (1), 1-8, 2017
Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides
KH Li, YF Cheung, WY Fu, KKY Wong, HW Choi
IEEE Journal of Selected Topics In Quantum Electronics 24 (6), 1-6, 2018
Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography
WY Fu, KKY Wong, HW Choi
Applied Physics Letters 95 (13), 133125, 2009
Structure and strain relaxation effects of defects in InxGa1−xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 103513, 2014
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
Evaluation of InGaN/GaN light-emitting diodes of circular geometry
XH Wang, WY Fu, PT Lai, HW Choi
Optics Express 17 (25), 22311-22319, 2009
Geometrical shaping of InGaN light-emitting diodes by laser micromachining
WY Fu, KN Hui, XH Wang, KKY Wong, PT Lai, HW Choi
IEEE Photonics Technology Letters 21 (15), 1078-1080, 2009
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ...
Nano Letters 15 (11), 7639-7643, 2015
Intensity-stabilized LEDs with monolithically integrated photodetectors
KH Li, H Lu, WY Fu, YF Cheung, HW Choi
IEEE Transactions on Industrial Electronics 66 (9), 7426-7432, 2018
Chip-scale GaN integration
KH Li, WY Fu, HW Choi
Progress in quantum electronics 70, 100247, 2020
The microstructure of non-polar a-plane (110) InGaN quantum wells
JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 175703, 2016
Polychromatic light-emitting diodes with a fluorescent nanosphere opal coating
KN Hui, WY Fu, WN Ng, CH Leung, PT Lai, KKY Wong, HW Choi
Nanotechnology 19 (35), 355203, 2008
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
JT Griffiths, T Zhu, F Oehler, RM Emery, WY Fu, BPL Reid, RA Taylor, ...
APL materials 2 (12), 126101, 2014
InGaN RGB light-emitting diodes with monolithically integrated photodetectors for stabilizing color chromaticity
KH Li, YF Cheung, W Jin, WY Fu, ATL Lee, SC Tan, SY Hui, HW Choi
IEEE Transactions on Industrial Electronics 67 (6), 5154-5160, 2019
Dislocation core structures in Si-doped GaN
SL Rhode, MK Horton, WY Fu, SL Sahonta, MJ Kappers, TJ Pennycook, ...
Applied Physics Letters 107 (24), 243104, 2015
Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
T Zhu, D Gachet, F Tang, WY Fu, F Oehler, MJ Kappers, P Dawson, ...
Applied Physics Letters 109 (23), 232103, 2016
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