| Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ... Nanotechnology 33 (50), 505704, 2022 | 3 | 2022 |
| Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors M Noshin, X Wen, R Soman, X Xu, S Chowdhury Applied Physics Letters 123 (6), 2023 | 2 | 2023 |
| High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion X Wen, KJ Lee, Y Nakazato, J Chun, S Chowdhury Crystals 13 (4), 709, 2023 | 2 | 2023 |
| A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion KJ Lee, X Wen, Y Nakazato, J Chun, M Noshin, C Meng, S Chowdhury Frontiers in Materials 10, 1229036, 2023 | 1 | 2023 |
| 10 MHz-Switching on GaN Trench CAVET up to 300° C Operation Enabled by High Channel Mobility X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ... IEEE Electron Device Letters, 2024 | | 2024 |
