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Marios Barlas
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Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications
A Grossi, E Vianello, MM Sabry, M Barlas, L Grenouillet, J Coignus, ...
IEEE Transactions on Electron Devices 66 (3), 1281-1288, 2019
662019
OxRAM for embedded solutions on advanced node: scaling perspectives considering statistical reliability and design constraints
J Sandrini, L Grenouillet, V Meli, N Castellani, I Hammad, S Bernasconi, ...
2019 IEEE International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2019
212019
Co-design of ReRAM passive crossbar arrays integrated in 180 nm CMOS technology
J Sandrini, M Barlas, M Thammasack, T Demirci, M De Marchi, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (3 …, 2016
152016
Improvement of HfO2 based RRAM array performances by local Si implantation
M Barlas, A Grossi, L Grenouillet, E Vianello, E Nolot, N Vaxelaire, ...
2017 IEEE International Electron Devices Meeting (IEDM), 14.6. 1-14.6. 4, 2017
142017
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells
M Barlas, B Traoré, L Grenouillet, S Bernasconi, P Blaise, M Alayan, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 168-171, 2016
82016
Interface properties of Al–Al2O3–Ge MIS capacitors and the effect of forming gas annealing
V Ioannou-Sougleridis, A Karageorgiou, M Barlas, S Ladas, D Skarlatos
Microelectronic Engineering 159, 84-89, 2016
72016
Effect of hf metal layer on the switching characteristic of hfox-based resistive random access memory
B Attarimashalkoubeh, J Sandrini, E Shahrabi, M Barlas, Y Leblebici
2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016
62016
Evaluation of ferroelectricity in Si-implanted HfO2 along cycling
T Francois, J Coignus, L Grenouillet, M Barlas, B Bessif, N Vaxelaire, ...
The Japan Society of Applied Physics, 2018
42018
Pixels with add-on structures to enhance quantum efficiency in the near infrared
F Bardonnet, A Crocherie, M Barlas, Q Abadie, C Jamin-Mornet
Optical Design and Engineering VIII 11871, 165-174, 2021
32021
Device for selecting a memory cell
M Barlas, P Blaise, L Grenouillet, B Sklenard, E Vianello
US Patent 10,985,317, 2021
32021
Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling
M Barlas, A Crocherie, F Bardonnet, Q Abadie, E Sungauer, M Vignetti, ...
Integrated Optics: Devices, Materials, and Technologies XXVI 12004, 227-235, 2022
22022
Oxide-based resistive non-volatile memory cell and method for manufacturing same
L Grenouillet, M Barlas, P Blaise, B Sklenard, E Vianello
US Patent 11,189,792, 2021
22021
Electrical characterization of the backside interface on BSI global shutter pixels with Tungsten-shield test structures on CDTI process
C Doyen, S Ricq, P Magnan, O Marcelot, M Barlas, S Place
Sensors 20 (1), 287, 2020
22020
Stacked Nanowires FETs: Mechanical robustness evaluation for sub-7nm nodes
L Gaben, A Arnaud, M Barlas, MP Samson, C Arvet, C Vizioz, ...
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 136-137, 2016
22016
Development and Characterization of metal oxide RRAM memory cells
M Barlas, Y Leblebici
MSc Thesis, École Polytechnique Fédérale de Lausanne, 2015
22015
Photodiode insulation
A Inard, M Barlas
US Patent App. 17/363,345, 2022
12022
Non-volatile memory allowing a high integration density
J Portal, M Barlas, L Grenouillet, E Vianello
US Patent 10,446,564, 2019
12019
OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics
M Barlas, L Grenouillet, E Vianello, V Delaye, T Dewolf, G Audoit, ...
Solid State Devices and Materials, 2017
12017
Resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants
L Grenouillet, M Barlas, E Nowak
US Patent 11,944,022, 2024
2024
Light sensor manufacturing method
M Barlas, Q Abadie
US Patent App. 18/175,360, 2023
2023
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