| ZnO nanowire UV photodetectors with high internal gain C Soci, A Zhang, B Xiang, SA Dayeh, DPR Aplin, J Park, XY Bao, YH Lo, ... Nano letters 7 (4), 1003-1009, 2007 | 2737 | 2007 |
| Anisotropic swelling and fracture of silicon nanowires during lithiation XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ... Nano letters 11 (8), 3312-3318, 2011 | 792 | 2011 |
| In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012 | 625 | 2012 |
| Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition B Xiang, P Wang, X Zhang, Shadi. A. Dayeh,, DPR Aplin, C Soci, D Yu, ... Nano letters 7 (2), 323-328, 2007 | 546 | 2007 |
| Ultrafast electrochemical lithiation of individual Si nanowire anodes XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ... Nano letters 11 (6), 2251-2258, 2011 | 451 | 2011 |
| Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ... ACS nano 7 (2), 1437-1445, 2013 | 443 | 2013 |
| High electron mobility InAs nanowire fieldeffect transistors SA Dayeh, DPR Aplin, X Zhou, PKL Yu, ET Yu, D Wang small 3 (2), 326-332, 2007 | 387 | 2007 |
| Lattice strain effects on the optical properties of MoS2 nanosheets L Yang, X Cui, J Zhang, K Wang, M Shen, S Zeng, SA Dayeh, L Feng, ... Scientific reports 4 (1), 5649, 2014 | 350 | 2014 |
| Strain engineering and epitaxial stabilization of halide perovskites Y Chen, Y Lei, Y Li, Y Yu, J Cai, MH Chiu, R Rao, Y Gu, C Wang, W Choi, ... Nature 577 (7789), 209-215, 2020 | 344 | 2020 |
| Precise semiconductor nanowire placement through dielectrophoresis S Raychaudhuri, SA Dayeh, D Wang, ET Yu Nano letters 9 (6), 2260-2266, 2009 | 258 | 2009 |
| A fabrication process for flexible single-crystal perovskite devices Y Lei, Y Chen, R Zhang, Y Li, Q Yan, S Lee, Y Yu, H Tsai, W Choi, ... Nature 583 (7818), 790-795, 2020 | 229 | 2020 |
| III-V nanowire growth mechanism: V/III ratio and temperature effects A Shadi, TY Edward, D Wang Nano letters 7 (8), 2486-2490, 2007 | 218 | 2007 |
| Direct observation of nanoscale size effects in Ge semiconductor nanowire growth SA Dayeh, ST Picraux Nano letters 10 (10), 4032-4039, 2010 | 171 | 2010 |
| High density individually addressable nanowire arrays record intracellular activity from primary rodent and human stem cell derived neurons R Liu, R Chen, AT Elthakeb, SH Lee, S Hinckley, ML Khraiche, J Scott, ... Nano letters 17 (5), 2757-2764, 2017 | 149 | 2017 |
| Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux Nano letters 11 (10), 4200-4206, 2011 | 134 | 2011 |
| Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang Applied Physics Letters 90 (16), 162112, 2007 | 132 | 2007 |
| Micromachined infrared bolometers on flexible polyimide substrates SA Dayeh, DP Butler, Z Celik-Butler Sensors and Actuators A: Physical 118 (1), 49-56, 2005 | 128 | 2005 |
| Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ... Nano letters 8 (11), 3755-3760, 2008 | 119 | 2008 |
| Electron transport in indium arsenide nanowires SA Dayeh Semiconductor Science and Technology 25 (2), 024004, 2010 | 112 | 2010 |
| Surface diffusion and substrate− nanowire adatom exchange in InAs nanowire growth SA Dayeh, ET Yu, D Wang Nano letters 9 (5), 1967-1972, 2009 | 108 | 2009 |
S. T. PicrauxLos Alamos National Laboratory在 lanl.gov 的电子邮件经过验证
