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Mehdi Mouhdach
Mehdi Mouhdach
CEA-LETI, Minatec Campus
Verified email at cea.fr
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Year
3D RRAMs with gate-all-around stacked nanosheet transistors for in-memory-computing
S Barraud, M Ezzadeen, D Bosch, T Dubreuil, N Castellani, V Meli, ...
2020 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2020
152020
Merging PDKs to build a design environment for 3D circuits: methodology, challenges and limitations
O Billoint, K Azizi-Mourier, G Cibrario, D Lattard, M Mouhdach, S Thuries, ...
2019 International 3D Systems Integration Conference (3DIC), 1-5, 2019
82019
3D sequential integration: applications and associated key enabling modules (design & technology)
P Batude, O Billoint, S Thuries, P Malinge, C Fenouillet-Beranger, ...
2021 IEEE International Electron Devices Meeting (IEDM), 3.2. 1-3.2. 4, 2021
32021
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
T Mota-Frutuoso, V Lapras, L Brunet, L Basset, J Lugo, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
12023
Area and cost analysis of the mixed signal circuits in a novel monolithic 3D process
BS Rikan, P Häfliger, G Cibrario, O Billoint, M Mouhdach
2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS …, 2021
12021
Opportunities and challenges brought by 3D-sequential integration
P Batude, L Brunet, C Fenouillet-Beranger, D Lattard, F Andrieu, M Vinet, ...
2021 IEEE International Interconnect Technology Conference (IITC), 1-1, 2021
12021
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