| Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi Nano Letters 20 (11), 7919-7926, 2020 | 17 | 2020 |
| Performance analysis and enhancement of negative capacitance logic devices based on internally resistive ferroelectrics CS Hsu, C Pan, A Naeemi IEEE Electron Device Letters 39 (5), 765-768, 2018 | 15 | 2018 |
| A theoretical study of multidomain ferroelectric switching dynamics with a physics-based SPICE circuit model for phase-field simulations CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Electron Devices 67 (7), 2952-2959, 2020 | 13 | 2020 |
| Physics-based models for magneto-electric spin-orbit logic circuits H Li, DE Nikonov, CC Lin, K Camsari, YC Liao, CS Hsu, A Naeemi, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 12 | 2022 |
| Evaluating the performances of the ultralow power magnetoelectric random access memory with a physics-based compact model of the antiferromagnet/ferromagnet bilayer YC Liao, CS Hsu, D Nikonov, SC Chang, H Li, IA Young, A Naeemi IEEE Transactions on Electron Devices 69 (5), 2331-2337, 2022 | 10 | 2022 |
| Hysteresis-free negative capacitance effect in metal-ferroelectric-insulator-metal capacitors with dielectric leakage and interfacial trapped charges CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi Physical Review Applied 15 (3), 034048, 2021 | 8 | 2021 |
| Endurance evaluation on OTS-PCM device using constant current stress scheme WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P7-1-P7-4, 2022 | 3 | 2022 |
| A micromagnetic study of the switching dynamics of the BiFeO/CoFe heterojunction YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi arXiv preprint arXiv:2004.08453, 2020 | 3 | 2020 |
| New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM … HY Cheng, A Grun, WC Chien, CW Yeh, A Ray, CW Cheng, EK Lai, ... 2022 International Electron Devices Meeting (IEDM), 18.5. 1-18.5. 4, 2022 | 2 | 2022 |
| Device Study on OTS-PCM for Persistent Memory Application: IBM/Macronix Phase Change Memory Joint Project WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ... 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 1 | 2022 |
| Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges CS Hsu, SC Chang, DE Nikonov, IA Young, A Naeemi arXiv preprint arXiv:2012.02691, 2020 | | 2020 |
| ii IEEE Journal on Exploratory Solid-State Computational Devices and Circuits—Vol. 8, No. 1 by A. Naeemi PAPERS AH Lone, S Amara, H Fariborzi, H Li, DE Nikonov, CC Lin, K Camsari, ... | | |
Azad NaeemiProfessor of Electrical and Computer Engineering, Georgia Institute of TechnologyVerified email at gatech.edu
