| Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor Mahalaxmi, B Acharya, GP Mishra IEEE Sensors Journal 20 (23), 13969 - 13975, 2020 | 62 | 2020 |
| Performance assessment of a cavity on source ChargePlasmaTFET-based biosensor M Patil, A Gedam, GP Mishra IEEE Sensors Journal 21 (3), 2526-2532, 2020 | 34 | 2020 |
| Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric N Bhardwaj, BB Upadhyay, B Parvez, P Pohekar, Y Yadav, A Sahu, ... Physica Scripta 98 (1), 015805, 2022 | 3 | 2022 |
| Structural analysis and Design modification of The Compressor Skid of Helium Liquifier Plant HR SHAH, AK Sahu, MY Patil International Journal of Engineering Research and Technology 2 (11), 2013 | 1 | 2013 |
| Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures A Sahu, B Parvez, M Patil, S Basak, J Sahu, BB Upadhyay, S Ganguly, ... Applied Physics Letters 124 (12), 2024 | | 2024 |
| Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications B Parvez, J Sahu, S Basak, M Patil, A Sahu, G Garg, S Ganguly, D Saha physica status solidi (a), 2300708, 2024 | | 2024 |
| Performance analysis of double-metal-gate dual-cavity dielectrically modulated-TFET as a label free biosensor Mahalaxmi, GP Mishra Materials Today: Proceedings 43 (6), 3740-3743, 2020 | | 2020 |
