| Frequency doubler based on ferroelectric tunnel field-effect transistor H Kim, B Kwak, JH Kim, D Kwon IEEE Transactions on Electron Devices 69 (7), 4046-4049, 2022 | 5 | 2022 |
| Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates B Kwak, K Lee, NH Park, SJ Jeon, H Kim, D Kwon IEEE Transactions on Electron Devices 69 (3), 1054-1057, 2022 | 5 | 2022 |
| Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction W Shin, RH Koo, KK Min, B Kwak, D Kwon, D Kwon, JH Lee Applied Physics Letters 122 (15), 2023 | 4 | 2023 |
| Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels K Lee, B Kwak, S Kim, D Kwon IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications B Kwak, K Lee, S Kim, D Kwon IEEE Electron Device Letters, 2024 | | 2024 |
| Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory B Kwak, H Kim, D Kwon Semiconductor Science and Technology 38 (5), 055013, 2023 | | 2023 |
| Analysis on Degradation of Ferroelectric Memory S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ... 한국차세대컴퓨팅학회 학술대회, 212-213, 2022 | | 2022 |
Hyunwoo KimKonkuk UniversityVerified email at konkuk.ac.kr
