关注
Anthony T. Wong
Anthony T. Wong
Jet Propulsion Laboratory
在 jpl.nasa.gov 的电子邮件经过验证
标题
引用次数
引用次数
年份
High-performance multilayer WSe2 field-effect transistors with carrier type control
PR Pudasaini, A Oyedele, C Zhang, MG Stanford, N Cross, AT Wong, ...
Nano Research 11, 722-730, 2018
1352018
Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation
H Guo, S Dong, PD Rack, JD Budai, C Beekman, Z Gai, W Siemons, ...
Physical review letters 114 (25), 256801, 2015
1102015
Full electroresistance modulation in a mixed-phase metallic alloy
ZQ Liu, L Li, Z Gai, JD Clarkson, SL Hsu, AT Wong, LS Fan, MW Lin, ...
Physical review letters 116 (9), 097203, 2016
1032016
Science goals and mission architecture of the Europa lander mission concept
KP Hand, CB Phillips, A Murray, JB Garvin, EH Maize, RG Gibbs, ...
The Planetary Science Journal 3 (1), 22, 2022
732022
Controlling octahedral rotations in a perovskite via strain doping
A Herklotz, AT Wong, T Meyer, MD Biegalski, HN Lee, TZ Ward
Scientific reports 6 (1), 26491, 2016
662016
Electrically reversible cracks in an intermetallic film controlled by an electric field
ZQ Liu, JH Liu, MD Biegalski, JM Hu, SL Shang, Y Ji, JM Wang, SL Hsu, ...
Nature communications 9 (1), 41, 2018
612018
Ionic Liquid Activation of Amorphous MetalOxide Semiconductors for Flexible Transparent Electronic Devices
PR Pudasaini, JH Noh, AT Wong, OS Ovchinnikova, AV Haglund, S Dai, ...
Advanced Functional Materials 26 (17), 2820-2825, 2016
562016
Giant controllable magnetization changes induced by structural phase transitions in a metamagnetic artificial multiferroic
SP Bennett, AT Wong, A Glavic, A Herklotz, C Urban, I Valmianski, ...
Scientific reports 6 (1), 22708, 2016
472016
High performance top-gated multilayer WSe2 field effect transistors
PR Pudasaini, MG Stanford, A Oyedele, AT Wong, AN Hoffman, ...
Nanotechnology 28 (47), 475202, 2017
412017
Reversible control of interfacial magnetism through ionic-liquid-assisted polarization switching
A Herklotz, EJ Guo, AT Wong, TL Meyer, S Dai, TZ Ward, HN Lee, ...
Nano letters 17 (3), 1665-1669, 2017
382017
Strain driven anisotropic magnetoresistance in antiferromagnetic La0. 4Sr0. 6MnO3
AT Wong, C Beekman, H Guo, W Siemons, Z Gai, E Arenholz, ...
Applied Physics Letters 105 (5), 2014
292014
Ionic liquid versus SiO2 gated a-IGZO thin film transistors: a direct comparison
PR Pudasaini, JH Noh, A Wong, AV Haglund, S Dai, TZ Ward, D Mandrus, ...
ECS Journal of Solid State Science and Technology 4 (9), Q105, 2015
272015
Role of electrical double layer structure in ionic liquid gated devices
JM Black, J Come, S Bi, M Zhu, W Zhao, AT Wong, JH Noh, PR Pudasaini, ...
ACS applied materials & interfaces 9 (46), 40949-40958, 2017
262017
Epitaxial growth of intermetallic MnPt films on oxides and large exchange bias
Z Liu, MD Biegalski, MSL Hsu, DS Shang, C Marker, J Liu, L Li, L Fan, ...
Advanced Materials 28 (1), 2015
262015
Impact of gate geometry on ionic liquid gated ionotronic systems
AT Wong, JH Noh, PR Pudasaini, B Wolf, N Balke, A Herklotz, Y Sharma, ...
APL Materials 5 (4), 2017
192017
Synthesis and Properties of Single-Crystalline Na4Si24
M Guerette, MD Ward, KA Lokshin, AT Wong, H Zhang, S Stefanoski, ...
Crystal Growth & Design 18 (12), 7410-7418, 2018
172018
Ion migration studies in exfoliated 2D molybdenum oxide via ionic liquid gating for neuromorphic device applications
C Zhang, PR Pudasaini, AD Oyedele, AV Ievlev, L Xu, AV Haglund, ...
ACS applied materials & interfaces 10 (26), 22623-22631, 2018
152018
Total sleep duration and daytime napping in relation to dementia detection risk: Results from the Million Women Study
ATY Wong, GK Reeves, S Floud
Alzheimer's & Dementia 19 (11), 4978-4986, 2023
112023
Ionic gating of ultrathin and leaky ferroelectrics
Y Sharma, AT Wong, A Herklotz, D Lee, AV Ievlev, L Collins, HN Lee, ...
Advanced Materials Interfaces 6 (5), 1801723, 2019
112019
Surface finish and diamond tool wear when machining PMMA and PC optics
C Bodlapati, T Dow, A Wong, K Garrard
Optical Manufacturing and Testing XII 10742, 64-82, 2018
82018
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