| Fin structure of FinFET GC Huang, CH Jiang, NK Chen, SP Sun, CH Wann US Patent 9,093,530, 2015 | 1019 | 2015 |
| Wrap-around contact SL Wang, NK Chen, S Ding-Kang, MC Chang, YA Lin, GC Huang, CF Hsu, ... US Patent 9,443,769, 2016 | 408 | 2016 |
| Extended Metal-Atom Chains with an Inert Second Row Transition Metal: [Ru5(μ5-tpda)4X2] (tpda2− = tripyridyldiamido dianion, X = Cl and NCS) C Yin, GC Huang, CK Kuo, MD Fu, HC Lu, JH Ke, KN Shih, YL Huang, ... Journal of the American Chemical Society 130 (31), 10090-10092, 2008 | 84 | 2008 |
| Self-aligned dual-metal silicide and germanide formation CH Wann, SP Sun, LY Yeh, C Shih, LC Yu, CH Tsai, CH Lin, NK Chen, ... US Patent 9,214,556, 2015 | 55 | 2015 |
| On the tuning of electric conductance of extended metal atom chains via axial ligands for [Ru3 (μ3-dpa) 4 (X) 2] 0/+(X= NCS−, CN−) KN Shih, MJ Huang, HC Lu, MD Fu, CK Kuo, GC Huang, GH Lee, C Chen, ... Chemical Communications 46 (8), 1338-1340, 2010 | 54 | 2010 |
| Even-Numbered Metal Chain Complexes: Synthesis, Characterization, and DFT Analysis of [Ni4(μ4-Tsdpda)4(H2O)2] (Tsdpda2- = N-(p-toluenesulfonyl)dipyridyldiamido), [Ni4(μ4-Tsdpda … X López, MY Huang, GC Huang, SM Peng, FY Li, M Bénard, MM Rohmer Inorganic chemistry 45 (22), 9075-9084, 2006 | 50 | 2006 |
| The First Heteropentanuclear Extended Metal‐Atom Chain: [Ni+Ru25+Ni2+Ni2+(tripyridyldiamido)4(NCS)2] MJ Huang, SA Hua, MD Fu, GC Huang, C Yin, CH Ko, CK Kuo, CH Hsu, ... Chemistry–A European Journal 20 (16), 4526-4531, 2014 | 49 | 2014 |
| FinFETs with Nitride Liners and Methods of Forming the Same NK Chen, GC Huang, CH Jiang, SP Sun, CH Wann US Patent App. 13/924,352, 2014 | 33 | 2014 |
| Ru2M(dpa)4Cl2 (M = Cu, Ni): Synthesis, Characterization, and Theoretical Analysis of Asymmetric Heterometal String Complexes of the Dipyridylamide Family GC Huang, M Bénard, MM Rohmer, LA Li, MJ Chiu, CY Yeh, GH Lee, ... European Journal of Inorganic Chemistry 2008 (11), 1767-1777, 2008 | 33 | 2008 |
| Semiconductor device including Fin-FET and manufacturing method thereof GC Huang, HSU Tzu-Hsiang, CJ Hsu, FC Yang, TC Tsai US Patent 9,780,214, 2017 | 26 | 2017 |
| Probing the electronic communication of linear heptanickel and nonanickel string complexes by utilizing two redox-active [Ni2 (napy) 4] 3+ moieties SA Hua, IPC Liu, H Hasanov, GC Huang, RH Ismayilov, CL Chiu, CY Yeh, ... Dalton Transactions 39 (16), 3890-3896, 2010 | 26 | 2010 |
| Fin field effect transistor gate oxide GC Huang, NK Chen, H Wann US Patent 9,105,661, 2015 | 24 | 2015 |
| Manipulation of electronic structure via supporting ligands: a charge disproportionate model within the linear metal framework of asymmetric nickel string [Ni 7 (phdptrany) 4 … SA Hua, GC Huang, IPC Liu, JH Kuo, CH Jiang, CL Chiu, CY Yeh, ... Chemical communications 46 (27), 5018-5020, 2010 | 21 | 2010 |
| FinFETs with nitride liners and methods of forming the same NK Chen, GC Huang, CH Jiang, SP Sun, CH Wann US Patent 9,870,956, 2018 | 15 | 2018 |
| Semiconductor device manufacturing methods and methods of forming insulating material layers GC Huang, T Hsiao, CH Jiang, NK Chen, H Luan, SP Sun, CH Wann US Patent 9,006,802, 2015 | 15 | 2015 |
| Self aligned contact formation NK Chen, SM Yu, GC Huang, CJ Hsu, SP Sun, CH Wann US Patent 8,921,136, 2014 | 14 | 2014 |
| Further investigations of linear trirhodium complexes: experimental and theoretical studies of [Rh 3 (dpa) 4 Cl 2] and [Rh 3 (dpa) 4 Cl 2](BF 4)[dpa= bis (2-pyridyl) amido anion] GC Huang, IPC Liu, JH Kuo, YL Huang, CY Yeh, GH Lee, SM Peng Dalton Transactions, 2623-2629, 2009 | 14 | 2009 |
| Further studies of [Ni 4 (DAniDANy) 4](DAniDANy 2−= N, N’-bis-p-anisyl-2, 7-diamido-1, 8-naphthyridine) and its one-electron oxidation product: Metal-metal sigma bonding in Ni … GC Huang, SA Hua, IPC Liu, CH Chien, JH Kuo, GH Lee, SM Peng Comptes Rendus. Chimie 15 (2-3), 159-162, 2012 | 11 | 2012 |
| Wrap-around contact on FinFET SL Wang, NK Chen, S Ding-Kang, MC Chang, YA Lin, GC Huang, CF Hsu, ... US Patent 9,941,367, 2018 | 9 | 2018 |
| Semiconductor device including Fin-FET and manufacturing method thereof GC Huang, HSU Tzu-Hsiang, CJ Hsu, FC Yang, TC Tsai US Patent 9,882,029, 2018 | 5 | 2018 |
