| Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 250 | 2015 |
| Efficient and realistic device modeling from atomic detail to the nanoscale JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ... Journal of Computational Electronics 12 (4), 592-600, 2013 | 124 | 2013 |
| Saving Moore’s law down to 1 nm channels with anisotropic effective mass H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman Scientific reports 6 (1), 31501, 2016 | 93 | 2016 |
| Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution YP Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 92 (8), 085301, 2015 | 83 | 2015 |
| Transferable tight-binding model for strained group IV and III-V materials and heterostructures Y Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck Physical Review B 94 (4), 045311, 2016 | 78 | 2016 |
| Spin-lattice relaxation times of single donors and donor clusters in silicon YL Hsueh, H Büch, Y Tan, Y Wang, LCL Hollenberg, G Klimeck, ... Physical review letters 113 (24), 246406, 2014 | 48 | 2014 |
| Digital alloy InAlAs avalanche photodiodes J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ... Journal of Lightwave Technology 36 (17), 3580-3585, 2018 | 47 | 2018 |
| III–V FET channel designs for high current densities and thin inversion layers M Rodwell, W Frensley, S Steiger, E Chagarov, S Lee, H Ryu, Y Tan, ... 68th Device Research Conference, 149-152, 2010 | 46 | 2010 |
| Colossal tunability in high frequency magnetoelectric voltage tunable inductors Y Yan, LD Geng, Y Tan, J Ma, L Zhang, M Sanghadasa, K Ngo, ... Nature communications 9 (1), 4998, 2018 | 42 | 2018 |
| Switching mechanism and the scalability of vertical-TFETs F Chen, H Ilatikhameneh, Y Tan, G Klimeck, R Rahman IEEE Transactions on Electron Devices 65 (7), 3065-3068, 2018 | 42 | 2018 |
| First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding Y Tan, FW Chen, AW Ghosh Applied Physics Letters 109 (10), 2016 | 40 | 2016 |
| Design principles for HgTe based topological insulator devices P Sengupta, T Kubis, Y Tan, M Povolotskyi, G Klimeck Journal of Applied Physics 114 (4), 2013 | 40 | 2013 |
| Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin Journal of Computational Electronics 12, 56-60, 2013 | 39 | 2013 |
| Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ... Photonics Research 6 (8), 794-799, 2018 | 38 | 2018 |
| Toward deterministic construction of low noise avalanche photodetector materials AK Rockwell, M Ren, M Woodson, AH Jones, SD March, Y Tan, Y Yuan, ... Applied Physics Letters 113 (10), 2018 | 37 | 2018 |
| Machine learning electron correlation in a disordered medium J Ma, P Zhang, Y Tan, AW Ghosh, GW Chern Physical Review B 99 (8), 085118, 2019 | 25 | 2019 |
| Single layer MoS2 band structure and transport M Salmani-Jelodar, Y Tan, G Klimeck 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 25 | 2011 |
| Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ... Applied Physics Letters 115 (12), 2019 | 24 | 2019 |
| Analytical electron-mobility model for arbitrarily stressed silicon Y Tan, X Li, L Tian, Z Yu IEEE transactions on electron devices 55 (6), 1386-1390, 2008 | 24 | 2008 |
| Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ... Proc. SISPAD, 1-4, 2012 | 23 | 2012 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
