关注
John R. Jameson
John R. Jameson
在 scu.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Electrochemical metallization memories—fundamentals, applications, prospects
I Valov, R Waser, JR Jameson, MN Kozicki
Nanotechnology 22 (25), 254003, 2011
11852011
Bipolar resistive switching in polycrystalline TiO2 films
K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi
Applied physics letters 90 (11), 113501-113501-3, 2007
2512007
Field-programmable rectification in rutile TiO2 crystals
JR Jameson, Y Fukuzumi, Z Wang, P Griffin, K Tsunoda, GI Meijer, Y Nishi
Applied Physics Letters 91 (11), 112101-112101-3, 2007
1232007
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum
Nature communications 9 (1), 5312, 2018
1072018
Quantized Conductance inConductive-Bridge Memory Cells
JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ...
IEEE electron device letters 33 (2), 257-259, 2012
1002012
Conductive-bridge memory (CBRAM) with excellent high-temperature retention
JR Jameson, P Blanchard, C Cheng, J Dinh, A Gallo, V Gopalakrishnan, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 30.1. 1-30.1. 4, 2013
812013
One-dimensional model of the programming kinetics of conductive-bridge memory cells
JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ...
Applied Physics Letters 99 (6), 2011
752011
Length dependence of current-induced breakdown in carbon nanofiber interconnects
H Kitsuki, T Yamada, D Fabris, JR Jameson, P Wilhite, M Suzuki, ...
Applied Physics Letters 92 (17), 2008
682008
Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculations
A Kawamoto, J Jameson, P Griffin, K Cho, R Dutton
IEEE Electron Device Letters 22 (1), 14-16, 2001
632001
Double-well model of dielectric relaxation current
JR Jameson, W Harrison, PB Griffin, JD Plummer
Applied physics letters 84 (18), 3489-3491, 2004
482004
Charge Trapping in High-k Gate Stacks Due to the Bilayer Structure Itself
JR Jameson, PB Griffin, JD Plummer, Y Nishi
Electron Devices, IEEE Transactions on 53 (8), 1858-1867, 2006
442006
Subquantum conductive-bridge memory
JR Jameson, D Kamalanathan
Applied Physics Letters 108 (5), 2016
402016
Challenges for atomic scale modeling in alternative gate stack engineering
A Kawamoto, J Jameson, K Cho, RW Dutton
IEEE Transactions on Electron Devices 47 (10), 1787-1794, 2000
322000
Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells
JR Jameson, N Gilbert, F Koushan, J Saenz, J Wang, S Hollmer, ...
Applied Physics Letters 100 (2), 2012
302012
Circuit modeling of high-frequency electrical conduction in carbon nanofibers
FR Madriz, JR Jameson, S Krishnan, X Sun, CY Yang
IEEE transactions on electron devices 56 (8), 1557-1561, 2009
302009
Recent progress in resistance change memory
Y Nishi, JR Jameson
2008 Device Research Conference, 271-274, 2008
252008
Conductive bridging RAM (CBRAM): then, now, and tomorrow
JR Jameson, P Blanchard, J Dinh, N Gonzales, V Gopalakrishnan, ...
ECS Transactions 75 (5), 41, 2016
232016
Resistive switching devices having alloyed electrodes and methods of formation thereof
WT Lee, C Gopalan, Y Ma, J Shields, P Blanchard, JR Jameson, ...
US Patent 8,847,192, 2014
232014
Role of hydrogen ions in TiO2-based memory devices
JR Jameson, Y Nishi
Integrated Ferroelectrics 124 (1), 112-118, 2011
212011
A semiclassical model of dielectric relaxation in glasses
JR Jameson, W Harrison, PB Griffin, JD Plummer, Y Nishi
Journal of applied physics 100 (12), 2006
212006
系统目前无法执行此操作,请稍后再试。
文章 1–20