Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye Applied Physics Letters 95, 172105, 2009 | 179 | 2009 |
Characterization of atomic-layer-deposited Al2O3∕ GaAs interface improved by NH3 plasma pretreatment HL Lu, L Sun, SJ Ding, M Xu, DW Zhang, LK Wang Applied physics letters 89 (15), 2006 | 95 | 2006 |
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited as Gate Dielectric M Xu, R Wang, PD Ye Electron Device Letters, IEEE, 1-3, 2011 | 89 | 2011 |
High performance deep-submicron inversion-mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering YQ Wu, M Xu, RS Wang, O Koybasi, PD Ye Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 82 | 2009 |
High-performance surface channel In-rich In0. 75Ga0. 25As MOSFETs with ALD high-k as gate dielectric Y Xuan, T Shen, M Xu, YQ Wu, PD Ye Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 81 | 2008 |
Metal-oxide-semiconductor field-effect transistors on GaAs (111) A surface with atomic-layer-deposited AlO as gate dielectrics M Xu, YQ Wu, O Koybasi, T Shen, PD Ye Applied Physics Letters 94, 212104, 2009 | 63 | 2009 |
Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique YQ Wu, M Xu, PD Ye, Z Cheng, J Li, JS Park, J Hydrick, J Bai, M Carroll, ... Applied Physics Letters 93 (24), 242106-242106-3, 2008 | 63 | 2008 |
Heteroepitaxy of single-crystal LaLuO on GaAs (111) A by atomic layer deposition Y Liu, M Xu, J Heo, DY Peide, RG Gordon Applied Physics Letters 97, 162910, 2010 | 60 | 2010 |
Band offsets of Al2O3/InxGa1-xAs (x= 0.53 and 0.75) and the effects of postdeposition annealing NV Nguyen, M Xu, OA Kirillov, PD Ye, C Wang, K Cheung, JS Suehle Applied Physics Letters 96 (5), 052107-052107-3, 2010 | 47 | 2010 |
High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation … JJ Gu, YQ Liu, M Xu, GK Celler, RG Gordon, PD Ye APPLIED PHYSICS LETTERS 97, 012106, 2010 | 47 | 2010 |
Spectroscopic and electrical properties of atomic layer deposition AlO gate dielectric on surface pretreated Si substrate M Xu, CH Xu, SJ Ding, HL Lu, DW Zhang, LK Wang Journal of applied physics 99, 074109, 2006 | 32 | 2006 |
New insight into Fermi-level unpinning on GaAs: Impact of different surface orientations M Xu, K Xu, R Contreras, M Milojevic, T Shen, O Koybasi, YQ Wu, ... Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 29 | 2009 |
New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation M Xu, JJ Gu, C Wang, DM Zhernokletov, RM Wallace, PD Ye Journal of Applied Physics 113 (1), 2013 | 26 | 2013 |
A distributive-transconductance model for border traps in III–V/high-k MOS capacitors C Zhang, M Xu, DY Peide, X Li IEEE electron device letters 34 (6), 735-737, 2013 | 24 | 2013 |
Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry K Xu, H Sio, OA Kirillov, L Dong, M Xu, PD Ye, D Gundlach, NV Nguyen Journal of Applied Physics 113 (2), 2013 | 21 | 2013 |
Inversion-mode InxGa1-xAs MOSFETs (x= 0.53, 0.65, 0.75) with atomic-layer-deposited high-k dielectrics PD Ye, Y Xuan, YQ Wu, M Xu ECS, 2009 | 20 | 2009 |
Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition L Hong-Liang, L Yan-Bo, X Min, D Shi-Jin, S Liang, Z Wei, W Li-Kang Chinese Physics Letters 23, 1929, 2006 | 19 | 2006 |
Initial surface reactions in atomic layer deposition of Al2O3 on the hydroxylated GaAs (001)-4× 2 surface HL Lu, W Chen, SJ Ding, M Xu, DW Zhang, LK Wang Journal of Physics: Condensed Matter 17, 7517, 2005 | 17 | 2005 |
ALD High-k as a Common Gate Stack Solution for Nano-electronics PD Ye, JJ Gu, YQ Wu, M Xu, Y Xuan, T Shen, AT Neal ECS Trans 28 (2), 51-68, 2010 | 15 | 2010 |
Mechanism of interfacial layer suppression after performing surface Al (CH) pretreatment during atomic layer deposition of AlO M Xu, C Zhang, SJ Ding, HL Lu, W Chen, QQ Sun, DW Zhang, LK Wang Journal of applied physics 100, 106101, 2006 | 15 | 2006 |