| Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014 | 5756 | 2014 |
| Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015 | 1290 | 2015 |
| Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014 | 1205 | 2014 |
| Channel Length Scaling of MoS2 MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012 | 829 | 2012 |
| Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014 | 665 | 2014 |
| Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015 | 608 | 2015 |
| Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007 | 606 | 2007 |
| GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 063501, 2005 | 542 | 2005 |
| Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014 | 531 | 2014 |
| Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018 | 516 | 2018 |
| Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012 | 492 | 2012 |
| Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014 | 460 | 2014 |
| Compound Semiconductor Devices-Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al2O3 as Gate Dielectric Y Xuan, YQ Wu, HC Lin, T Shen, PD Ye IEEE Electron Device Letters 28 (11), 935-938, 2007 | 458 | 2007 |
| Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995 | 436 | 1995 |
| Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018 | 406 | 2018 |
| High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008 | 402 | 2008 |
| GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003 | 394 | 2003 |
| InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012 | 382 | 2012 |
| Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020 | 374 | 2020 |
| Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions Y Xu, C Cheng, S Du, J Yang, B Yu, J Luo, W Yin, E Li, S Dong, P Ye, ... ACS nano 10 (5), 4895-4919, 2016 | 332 | 2016 |
Han LiuApple Inc.Verified email at apple.com
