| High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts T Wang, K Andrews, A Bowman, T Hong, M Koehler, J Yan, D Mandrus, ... Nano letters 18 (5), 2766-2771, 2018 | 128 | 2018 |
| Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer K Andrews, A Bowman, U Rijal, PY Chen, Z Zhou ACS nano 14 (5), 6232-6241, 2020 | 68 | 2020 |
| Vertically stacked and self-encapsulated van der Waals heterojunction diodes using two-dimensional layered semiconductors J Miao, Z Xu, Q Li, A Bowman, S Zhang, W Hu, Z Zhou, C Wang Acs Nano 11 (10), 10472-10479, 2017 | 61 | 2017 |
| Near-infrared optical transitions in PdSe 2 phototransistors TS Walmsley, K Andrews, T Wang, A Haglund, U Rijal, A Bowman, ... Nanoscale 11 (30), 14410-14416, 2019 | 29 | 2019 |
| Ultrafast Photocurrent Response and High Detectivity in Two-Dimensional MoSe2-based Heterojunctions CD Ornelas, A Bowman, TS Walmsley, T Wang, K Andrews, Z Zhou, ... ACS Applied Materials & Interfaces 12 (41), 46476-46482, 2020 | 23 | 2020 |
| Reversible photo-induced doping in WSe 2 field effect transistors X Luo, K Andrews, T Wang, A Bowman, Z Zhou, YQ Xu Nanoscale 11 (15), 7358-7363, 2019 | 22 | 2019 |
| Collision and diffusion in microwave breakdown of nitrogen gas in and around microgaps JD Campbell, A Bowman, GT Lenters, SK Remillard AIP Advances 4 (1), 2014 | 14 | 2014 |
| Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors K Andrews, U Rijal, A Bowman, HJ Chuang, MR Koehler, J Yan, ... ACS Applied Nano Materials 4 (5), 5598-5610, 2021 | 7 | 2021 |
| Improved n-type Field-Effect Transistor Performance using WSe2/PdSe2 Heterostructure as a Channel Material A Bowman, K Andrews, A Haglund, D Mandrus, Z Zhou APS March Meeting Abstracts 2022, G60. 003, 2022 | | 2022 |
| High Mobility N-Type Field Effect Transistors Enabled by WSe2/PdSe2 Heterojunctions A Bowman Wayne State University, 2021 | | 2021 |
| High Mobility n-type Field-Effect Transistors Based on WSe2/PdSe2Heterostructures A Bowman, K Andrews, A Haglund, D Mandrus, Z Zhou APS March Meeting Abstracts 2021, C56. 011, 2021 | | 2021 |
| High-Performance WSe2 Field-Effect Transistors with Accumulation-Type Ohmic Contacts K Andrews, U Rijal, A Bowman, HJ Chuang, J Yan, D Mandrus, Z Zhou APS March Meeting Abstracts 2021, F56. 002, 2021 | | 2021 |
| Contact Engineering of 2D Semiconductors using Ultrathin Transition Metal Dichalcogenides as a Contact Interlayer K Andrews, A Bowman, U Rijal, PY Chen, Z Zhou APS March Meeting Abstracts 2019, F12. 009, 2019 | | 2019 |
| Improved On-Off Ratio in Black Phosphorus Field-Effect Transistors with True Ohmic Contacts K Andrews, A Bowman, U Rijal, M Koehler, D Mandrus, Z Zhou APS March Meeting Abstracts 2018, K37. 010, 2018 | | 2018 |
| High Mobility Palladium Diselenide (PdSe2) Field Effect Transistors Using heavily n-doped Graphene Contacts A Bowman, K Andrews, U Rijal, A Haglund, D Mandrus, Z Zhou, AB Team APS March Meeting Abstracts 2018, K37. 012, 2018 | | 2018 |
| Measuring the Barrier Height at Transition Metal Dichalcogenide Heterojunctions U Rijal, A Bowman, K Andrews, M Koehler, D Mandrus, Z Zhou APS March Meeting Abstracts 2018, T60. 177, 2018 | | 2018 |
| Substrate dependence of Hall and Field-effect mobilities in few-layer MoS2 field-effect transistors B Chamlagain, M Perera, HJ Chuang, A Bowman, U Rijal, K Andrews, ... APS March Meeting Abstracts 2016, E15. 009, 2016 | | 2016 |
| Modeling Plasma Formation in a Micro-gap at Microwave Frequency A Bowman, S Remillard APS March Meeting Abstracts 2013, H1. 095, 2013 | | 2013 |
| A Modified Method of Nanofabrication Using 2D Semiconductor Materials in Field-Effect Transistor (FET) Z Zhou, A Bowman, A Rahman | | |
Kraig AndrewsLam ResearchVerified email at lamresearch.com
