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Besland M-P
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A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator
P Stoliar, J Tranchant, B Corraze, E Janod, MP Besland, F Tesler, ...
Advanced Functional Materials 27 (11), 1604740, 2017
2352017
Resistive switching in Mott insulators and correlated systems
E Janod, J Tranchant, B Corraze, M Querré, P Stoliar, M Rozenberg, ...
Advanced Functional Materials 25 (40), 6287-6305, 2015
1852015
Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering
C Duquenne, MP Besland, PY Tessier, E Gautron, Y Scudeller, D Averty
Journal of Physics D: Applied Physics 45 (1), 015301, 2011
1222011
Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect
A Rouahi, A Kahouli, F Challali, MP Besland, C Vallée, B Yangui, ...
Journal of Physics D: Applied Physics 46 (6), 065308, 2013
792013
Reactive ion etching of sol–gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes
D Vaufrey, MB Khalifa, MP Besland, C Sandu, MG Blanchin, ...
Synthetic Metals 127 (1-3), 207-211, 2002
602002
TEM and XPS studies on CdS/CIGS interfaces
J Han, C Liao, L Cha, T Jiang, H Xie, K Zhao, MP Besland
Journal of Physics and Chemistry of Solids 75 (12), 1279-1283, 2014
552014
How a dc electric field drives Mott insulators out of equilibrium
P Diener, E Janod, B Corraze, M Querré, C Adda, M Guilloux-Viry, ...
Physical Review Letters 121 (1), 016601, 2018
532018
Thickness and substrate effects on AlN thin film growth at room temperature
B Abdallah, C Duquenne, MP Besland, E Gautron, PY Jouan, PY Tessier, ...
The European Physical Journal Applied Physics 43 (03), 309-313, 2008
522008
Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films
C Duquenne, PY Tessier, MP Besland, B Angleraud, PY Jouan, R Aubry, ...
Journal of Applied Physics 104 (6), 2008
502008
Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration
F Challali, D Mendil, T Touam, T Chauveau, V Bockelée, AG Sanchez, ...
Materials Science in Semiconductor Processing 118, 105217, 2020
482020
Passivation of InP using In(PO3)3‐condensed phosphates: From oxide growth properties to metal‐insulator‐semiconductor field‐effect‐transistor devices
Y Robach, MP Besland, J Joseph, G Hollinger, P Viktorovitch, P Ferret, ...
Journal of applied physics 71 (6), 2981-2992, 1992
471992
Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application
J Han, G Fu, V Krishnakumar, C Liao, W Jaegermann, MP Besland
Journal of physics and chemistry of solids 74 (12), 1879-1883, 2013
462013
Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP
G Hollinger, D Gallet, M Gendry, MP Besland, J Joseph
Applied physics letters 59 (13), 1617-1619, 1991
461991
Electrical and optical characteristics of indium tin oxide thin films deposited by cathodic sputtering for top emitting organic electroluminescent devices
D Vaufrey, MB Khalifa, MP Besland, J Tardy, C Sandu, MG Blanchin, ...
Materials Science and Engineering: C 21 (1-2), 265-271, 2002
452002
Membrane filter
S Galaj, MP Besland, A Wicker, J Gillot, R Soria
US Patent 4,946,592, 1990
451990
Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
JAJ Rupp, M Querré, A Kindsmüller, MP Besland, E Janod, R Dittmann, ...
Journal of applied physics 123 (4), 2018
412018
Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition
M Lapeyrade, MP Besland, C Meva’a, A Sibai, G Hollinger
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (2 …, 1999
381999
Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition
MP Besland, D Aissa, PRJ Barroy, S Lafane, PY Tessier, B Angleraud, ...
Thin solid films 495 (1), 86-91, 2006
372006
Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
EA Alam, I Cortes, MP Besland, A Goullet, L Lajaunie, P Regreny, ...
Journal of Applied Physics 109 (8), 2011
362011
Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
P Viktorovitch, P Louis, MP Besland, A Chovet
Solid-state electronics 38 (5), 1035-1043, 1995
351995
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