关注
Fabio Carta
Fabio Carta
IBM - Research Staff Member
在 us.ibm.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures
H Hlaing, CH Kim, F Carta, CY Nam, RA Barton, N Petrone, J Hone, ...
Nano Letters 15 (1), 69-74, 2015
932015
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
572016
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
402019
3D cross-point phase-change memory for storage-class memory
HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky
Journal of Physics D: Applied Physics 52 (47), 473002, 2019
372019
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
362017
Templating and charge injection from copper electrodes into solution-processed organic field-effect transistors
CH Kim, H Hlaing, F Carta, Y Bonnassieux, G Horowitz, I Kymissis
ACS applied materials & interfaces 5 (9), 3716-3721, 2013
332013
A study on OTS-PCM pillar cell for 3-D stackable memory
WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018
232018
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
212018
A flexible and fast PyTorch toolkit for simulating training and inference on analog crossbar arrays
MJ Rasch, D Moreda, T Gokmen, M Le Gallo, F Carta, C Goldberg, ...
2021 IEEE 3rd international conference on artificial intelligence circuits …, 2021
152021
Bimorph actuator with monolithically integrated CMOS OFET control
F Carta, YJ Hsu, J Sarik, I Kymissis
Organic Electronics 14 (1), 286-290, 2013
152013
Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
132019
Sequential lateral solidification of silicon thin films on cu BEOL-integrated wafers for monolithic 3-D integration
F Carta, SM Gates, AB Limanov, JS Im, DC Edelstein, I Kymissis
IEEE Transactions on Electron Devices 62 (11), 3887-3891, 2015
132015
High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
CW Yeh, WC Chien, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
2018 IEEE Symposium on VLSI Technology, 205-206, 2018
112018
A no-verification multi-level-cell (mlc) operation in cross-point ots-pcm
N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
92020
Si incorporation into assege chalcogenides for high thermal stability, high endurance and extremely low vth drift 3d stackable cross-point memory
HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
72020
Access device and phase change memory combination structure in backend of line (beol)
R Bruce, F Carta, GWY Fraczak, H Miyazoe, KR Virwani
US Patent App. 15/784,343, 2019
62019
Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration
F Carta, SM Gates, AB Limanov, H Hlaing, JS Im, DC Edelstein, I Kymissis
Applied Physics Letters 105 (24), 242904, 2014
52014
Reliability benefits of a metallic liner in confined PCM
W Kim, S Kim, R Bruce, F Carta, G Fraczak, A Ray, C Lam, M BrightSky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 5-1-6D. 5-5, 2018
42018
Ofet including pvdf-trfe-cfe dielectric
Z Jia, N Pervez, F Carta, I Kymissis
US Patent 9,099,661, 2015
42015
Barrier layer for selector devices and memory devices using same
HY Cheng, HL Lung, RL Bruce, F Carta
US Patent App. 16/355,292, 2020
32020
系统目前无法执行此操作,请稍后再试。
文章 1–20