| Comprehensive investigations of HBM ESD robustness for GaN-on-Si RF HEMTs S Abhinay, WM Wu, CA Shih, SH Chen, A Sibaja-Hernandez, B Parvais, ... 2022 International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2022 | 3 | 2022 |
| ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs WM Wu, SH Chen, CA Shih, B Parvais, N Collaert, MD Ker, TL Wu, ... IEEE Electron Device Letters, 2023 | | 2023 |
