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Jaewon Kim
Jaewon Kim
SAIT (Samsung Advanced Institute of Technology)
Verified email at samsung.com
Title
Cited by
Cited by
Year
Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni (111) by metal-organic chemical vapor deposition
H Jeong, DY Kim, J Kim, S Moon, N Han, SH Lee, OFN Okello, K Song, ...
Scientific reports 9 (1), 1-8, 2019
532019
Pressure-dependent growth of wafer-scale few-layer h-BN by metal–organic chemical vapor deposition
DY Kim, N Han, H Jeong, J Kim, S Hwang, K Song, SY Choi, JK Kim
Crystal Growth & Design 17 (5), 2569-2575, 2017
272017
Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition
DY Kim, N Han, H Jeong, J Kim, S Hwang, JK Kim
AIP Advances 7 (4), 045116, 2017
262017
Enhanced catalytic activity of edge-exposed 1T phase WS 2 grown directly on a WO 3 nanohelical array for water splitting
N Lee, IY Choi, KY Doh, J Kim, H Sim, D Lee, SY Choi, JK Kim
Journal of Materials Chemistry A 7 (46), 26378-26384, 2019
242019
Resistive switching in few-layer hexagonal boron nitride mediated by defects and interfacial charge transfer
H Jeong, J Kim, DY Kim, J Kim, S Moon, OF Ngome Okello, S Lee, ...
ACS applied materials & interfaces 12 (41), 46288-46295, 2020
212020
Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp2-Hybridized Boron Nitrides
DY Kim, H Jeong, J Kim, N Han, JK Kim
ACS applied materials & interfaces 10 (20), 17287-17294, 2018
112018
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
S Moon, SJ Chang, Y Kim, OFN Okello, J Kim, J Kim, HW Jung, HK Ahn, ...
ACS Applied Materials & Interfaces 13 (49), 59440-59449, 2021
102021
Structural evolution of hexagonal boron nitride powder by Bead-milling
J Kim, Y Kim, OFN Okello, S Moon, J Kim, SY Choi, J Son, JK Kim
Materials Letters 300, 130118, 2021
32021
Transfer-Free Direct Growth of Wafer Scale Hexagonal Boron Nitride on Silicon Dioxide by MOCVD for Integration of Si-Based Electronics
J Kim, S Kim, J Kim, H Jeong, JK Kim
6th International Conference on Advanced Electromaterials; Jeju, Korea, 2021
2021
Nucleation and Growth of MOCVD GaN on 2D h-BN
J Kim, S Moon, J Kim, JK Kim
The 12th Recent Progress in Graphene and Two-dimensional Materials Research …, 2021
2021
Wafer-scale Growth of Hexagonal Boron Nitride Passivation Layer Directly on III-Nitride High-electron Mobility Transistor for Radio-frequency Operation
S Moon, J Kim, J Kim, JK Kim
The 12th Recent Progress in Graphene and Two-dimensional Materials Research …, 2021
2021
Direct growth of wafer scale hexagonal boron nitride on silicon dioxide by MOCVD for integration of Si-based electronics
J Kim, S Moon, H Jeong, J Kim, JK Kim
The 12th Recent Progress in Graphene and Two-dimensional Materials Research …, 2021
2021
Enhanced Nucleation and Growth of MOCVD GaN on 2D h-BN by Thermal Nitridation
J Kim, M Han, H Jeong, S Moon, J Kim, OFN Okello, DY Kim, N Han, ...
6th International Conference on Electronic Materials and Nanotechnology for …, 2020
2020
Wafer-Scale and Selective-Area Growth of High-Quality Hexagonal Boron Nitride on Ni(111) by Metal-Organic Chemical Vapor Deposition
H Jeong, J Kim, S Moon, JK Kim
6th International Conference on Electronic Materials and Nanotechnology for …, 2020
2020
Wafer-Scale Growth of Hexagonal Boron Nitride on Gallium Nitride Substrates by Metal-Organic Chemical Vapor Deposition
S Moon, J Kim, H Jeong, J Kim, FNO Odongo, S Song, J Kim, SY Choi, ...
6th International Conference on Electronic Materials and Nanotechnology for …, 2020
2020
Transfer-Free Direct Growth of Wafer Scale Hexagonal Boron Nitride on Silicon Dioxide by MOCVD for Integration of Si-Based Electronics
J Kim, H Jeong, J Kim, S Moon, JK Kim
6th International Conference on Electronic Materials and Nanotechnology for …, 2020
2020
Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer
J Kim, H Jeong, J Kim, S Moon, JK Kim
6th International Conference on Electronic Materials and Nanotechnology for …, 2020
2020
Characteristics of Hetero-epitaxial GaN Growth on 2D Hexagonal Boron Nitride by MOCVD
J Kim, H Jeong, S Moon, J Kim, JK Kim
Korean Society of Industrial and Engineering Chemistry (KSIEC) Spring …, 2019
2019
Wafer-Scale and Selective-Area Growth of High-Quality h-BN by MOVPE
H Jeong, DY Kim, J Kim, S Moon, JK Kim
4th International Workshop on Ultraviolet Materials and Devices (IWUMD4 …, 2019
2019
Growth and Interface Structural Characterization of MOCVD GaN on h-BN
J Kim, OFN Okello, H Jeong, DY Kim, N Han, S Lee, S Moon, J Kim, ...
International Workshop on Nitride Semiconductors (IWN 2018); Kanazawa, Japan, 2018
2018
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