| Improved model for excess base current in irradiated lateral pnp bipolar junction transistors BS Tolleson, PC Adell, B Rax, HJ Barnaby, A Privat, X Han, A Mahmud, ... IEEE Transactions on Nuclear Science 65 (8), 1488-1495, 2018 | 16 | 2018 |
| Multiscale modeling of total ionizing dose effects in commercial-off-the-shelf parts in bipolar technologies A Privat, HJ Barnaby, PC Adell, BS Tolleson, Y Wang, X Han, P Davis, ... IEEE Transactions on Nuclear Science 66 (1), 190-198, 2018 | 14 | 2018 |
| Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation A Privat, HJ Barnaby, BS Tolleson, K Muthuseenu, PC Adell Microelectronics Reliability 113, 113947, 2020 | 2 | 2020 |
| Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure A Privat, HJ Barnaby, BS Tolleson, K Muthuseenu, PC Adell 2019 19th European Conference on Radiation and Its Effects on Components and …, 2019 | 1 | 2019 |
| TID Response of an Analog In-Memory Neural Network Accelerator B Tolleson, C Bennett, TP Xiao, D Wilson, J Short, J Kim, DR Hughart, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | | 2023 |
| Vector-Matrix Multiplication Engine for Neuromorphic Computation with a CBRAM Crossbar Array [Slides] B Tolleson, M Marinella, C Bennett, H Barnaby, D Wilson, J Short Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022 | | 2022 |
| Method for modeling excess current in irradiated bipolar junction transistors HJ Barnaby, P Adell, B Tolleson US Patent 11,017,143, 2021 | | 2021 |
