| 3D 65nm CMOS with 320° C microwave dopant activation YJ Lee, YL Lu, FK Hsueh, KC Huang, CC Wan, TY Cheng, MH Han, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 237 | 2009 |
| Gate-all-around junctionless transistors with heavily doped polysilicon nanowire channels CJ Su, TI Tsai, YL Liou, ZM Lin, HC Lin, TS Chao IEEE Electron Device Letters 32 (4), 521-523, 2011 | 224 | 2011 |
| Nanometer-scale conversion of to FSS Chien, JW Chang, SW Lin, YC Chou, TT Chen, S Gwo, TS Chao, ... Applied Physics Letters 76 (3), 360-362, 2000 | 125 | 2000 |
| A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation Y Li, SM Sze, TS Chao Engineering with Computers 18, 124-137, 2002 | 120 | 2002 |
| Local electric-field-induced oxidation of titanium nitride films S Gwo, CL Yeh, PF Chen, YC Chou, TT Chen, TS Chao, SF Hu, ... Applied physics letters 74 (8), 1090-1092, 1999 | 101 | 1999 |
| Improving radiation hardness of EEPROM/flash cell by N 2 O annealing T Huang, FC Jong, TS Chao, HC Lin, LY Leu, K Young, CH Lin, KY Chin IEEE Electron Device Letters 19 (7), 256-258, 1998 | 88 | 1998 |
| Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications FSS Chien, YC Chou, TT Chen, WF Hsieh, TS Chao, S Gwo Journal of Applied Physics 89 (4), 2465-2472, 2001 | 82 | 2001 |
| High-k cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films TM Pan, TF Lei, TS Chao Applied Physics Letters 78 (10), 1439-1441, 2001 | 77 | 2001 |
| Low-temperature microwave annealing processes for future IC fabrication—A review YJ Lee, TC Cho, SS Chuang, FK Hsueh, YL Lu, PJ Sung, HC Chen, ... IEEE Transactions on electron devices 61 (3), 651-665, 2014 | 73 | 2014 |
| High Quality Ultrathin CoTiO3 High‐k Gate Dielectrics TM Pan, TF Lei, TS Chao, KL Chang, KC Hsieh Electrochemical and Solid-State Letters 3 (9), 433, 2000 | 73 | 2000 |
| Improvement of junction leakage of nickel silicided junction by a Ti-capping layer TH Hou, TF Lei, TS Chao IEEE Electron Device Letters 20 (11), 572-573, 1999 | 69 | 1999 |
| Fabrication and Characterization of High‐k Dielectric Nickel Titanate Thin Films Using a Modified Sol–Gel Method SH Chuang, ML Hsieh, SC Wu, HC Lin, TS Chao, TH Hou Journal of the American ceramic society 94 (1), 250-254, 2011 | 54 | 2011 |
| Reliability Mechanisms of LTPS-TFT WithGate Dielectric: PBTI, NBTI, and Hot-Carrier Stress MW Ma, CY Chen, WC Wu, CJ Su, KH Kao, TS Chao, TF Lei IEEE transactions on electron devices 55 (5), 1153-1160, 2008 | 54 | 2008 |
| Process for suppressing boron penetration in BF2+-implanted P+-poly-Si gate using inductively-coupled nitrogen plasma TS Chao, CH Chu US Patent 5,629,221, 1997 | 54 | 1997 |
| Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory WC Wu, TS Chao, WC Peng, WL Yang, JC Wang, JH Chen, CS Lai, ... IEEE Electron Device Letters 28 (3), 214-216, 2007 | 50 | 2007 |
| A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing YJ Lee, TC Cho, KH Kao, PJ Sung, FK Hsueh, PC Huang, CT Wu, SH Hsu, ... 2014 IEEE international Electron devices meeting, 32.7. 1-32.7. 4, 2014 | 48 | 2014 |
| Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate CS Lai, WC Wu, JC Wang Applied Physics Letters 86 (22), 2005 | 48 | 2005 |
| A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs T Wang, LP Chiang, NK Zous, CF Hsu, LY Huang, TS Chao IEEE Transactions on Electron Devices 46 (9), 1877-1882, 1999 | 48 | 1999 |
| Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment CS Lai, WC Wu, TS Chao, JH Chen, JC Wang, LL Tay, N Rowell Applied physics letters 89 (7), 2006 | 47 | 2006 |
| First demonstration of CMOS inverter and 6T-SRAM based on GAA CFETs structure for 3D-IC applications SW Chang, PJ Sung, TY Chu, DD Lu, CJ Wang, NC Lin, CJ Su, SH Lo, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.7. 1-11.7. 4, 2019 | 45 | 2019 |
Shangjr (Felix) GwoNational Tsing-Hua UniversityVerified email at phys.nthu.edu.tw
