| Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ... Journal of Crystal Growth 528, 125254, 2019 | 51 | 2019 |
| α-Ga2O3 grown by low temperature atomic layer deposition on sapphire JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ... Journal of Crystal Growth 487, 23-27, 2018 | 48 | 2018 |
| Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics PR Chalker, PA Marshall, S Romani, JW Roberts, SJC Irvine, DA Lamb, ... Journal of Vacuum Science & Technology A 31 (1), 2013 | 47 | 2013 |
| Atomic layer deposited α-Ga2O3 solar-blind photodetectors J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ... Journal of Physics D: Applied Physics 52 (47), 475101, 2019 | 45 | 2019 |
| Influence of Polymorphism on the Electronic Structure of Ga2O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials 32 (19), 8460-8470, 2020 | 43 | 2020 |
| Band alignments at Ga2O3 heterojunction interfaces with Si and Ge JT Gibbon, L Jones, JW Roberts, M Althobaiti, PR Chalker, IZ Mitrovic, ... AIP Advances 8 (6), 2018 | 20 | 2018 |
| Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer … JW Roberts, PR Chalker, KB Lee, PA Houston, SJ Cho, IG Thayne, ... Applied Physics Letters 108 (7), 2016 | 20 | 2016 |
| Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering A Barthel, J Roberts, M Napari, M Frentrup, T Huq, A Kovács, R Oliver, ... Micromachines 11 (12), 1128, 2020 | 19 | 2020 |
| Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates Q Lu, Y Mu, JW Roberts, M Althobaiti, VR Dhanak, J Wu, C Zhao, CZ Zhao, ... Materials 8 (12), 8169-8182, 2015 | 19 | 2015 |
| Study of Ti contacts to corundum α-Ga2O3 F Massabuau, D Nicol, F Adams, J Jarman, J Roberts, A Kovacs, ... Journal of Physics D: Applied Physics 54 (38), 384001, 2021 | 10 | 2021 |
| Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5) x (Al2O3) 1− x as potential gate dielectrics for GaN/AlxGa1− xN/GaN high … T Partida-Manzanera, JW Roberts, TN Bhat, Z Zhang, HR Tan, ... Journal Of Applied Physics 119 (2), 2016 | 10 | 2016 |
| Modelling of metallic particle binders for increased part density in binder jet printed components JW Roberts, CJ Sutcliffe, PL Green, K Black Additive Manufacturing 34, 101244, 2020 | 8 | 2020 |
| Comparison of atomic layer deposited Al2O3 and (Ta2O5) 0.12 (Al2O3) 0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron … T Partida-Manzanera, ZH Zaidi, JW Roberts, SB Dolmanan, KB Lee, ... Journal of Applied Physics 126 (3), 2019 | 8 | 2019 |
| A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor SJ Cho, JW Roberts, I Guiney, X Li, G Ternent, K Floros, CJ Humphreys, ... Microelectronic Engineering 147, 277-280, 2015 | 8 | 2015 |
| Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs ZH Zaidi, KB Lee, JW Roberts, I Guiney, H Qian, S Jiang, JS Cheong, P Li, ... Journal of Applied Physics 123 (18), 2018 | 7 | 2018 |
| Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors FCP Massabuau, JW Roberts, D Nicol, PR Edwards, M McLelland, ... Oxide-based Materials and Devices XII 11687, 23-30, 2021 | 6 | 2021 |
| Atomic layer deposition of niobium nitride from different precursors P Pizzol, JW Roberts, J Wrench, OB Malyshev, R Valizadeh, PR Chalker Proc. 8th Int. Particle Accelerator Conf.(IPAC'17), 1094-1097, 2017 | 4 | 2017 |
| Effect of HCl cleaning on InSb–Al2O3 MOS capacitors OJ Vavasour, R Jefferies, M Walker, JW Roberts, NR Meakin, ... Semiconductor Science and Technology 34 (3), 035032, 2019 | 3 | 2019 |
| Dielectric barrier layer PR Chalker, JW Roberts US Patent App. 15/527,198, 2017 | 3 | 2017 |
| Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3 D Nicol, Y Oshima, JW Roberts, L Penman, D Cameron, PR Chalker, ... Applied Physics Letters 122 (6), 2023 | 2 | 2023 |
