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Chinmoy Nath Saha, Ph.D.
Chinmoy Nath Saha, Ph.D.
Process Development Engineer at Texas instruments|Former Research Assistant at University at Buffalo
Verified email at ti.com - Homepage
Title
Cited by
Cited by
Year
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
A Vaidya, CN Saha, U Singisetti
IEEE Electron Device Letters 42 (10), 1444-1447, 2021
472021
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ...
Applied Physics Letters 122 (18), 2023
222023
Temperature dependent pulsed IV and RF characterization of β-(AlxGa1− x) 2O3/Ga2O3 hetero-structure FET with ex situ passivation
CN Saha, A Vaidya, U Singisetti
Applied Physics Letters 120 (17), 2022
152022
Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region
R Fabiha, CN Saha, MS Islam
2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC), 310-313, 2017
62017
Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region
CN Saha, R Fabiha, MS Islam
2017 International Conference on Electrical, Computer and Communication …, 2017
62017
Self-heating in ultra-wide bandgap n-type SrSnO3 thin films
P Golani, CN Saha, PP Sundaram, F Liu, TK Truttmann, VR Chaganti, ...
Applied Physics Letters 121 (16), 2022
32022
Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices
S Saha, L Meng, AFM Bhuiyan, A Sharma, CN Saha, H Zhao, U Singisetti
Applied Physics Letters 123 (13), 2023
12023
Sub-100 nm {\beta}-Ga2O3 MOSFET with 100 GHz fMAX and> 100 V breakdown
CN Saha, A Vaidya, AFM Bhuiyan, L Meng, H Zhao, U Singisetti
arXiv preprint arXiv:2305.04725, 2023
2023
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
CN Saha, A Vaidya, AFM Bhuiyan, L Meng, H Zhao, U Singisetti
arXiv preprint arXiv:2211.01088, 2022
2022
Si3N4 Ex-situ Passivation Study and Temperature-Dependent RF Performance Analysis of β-(Al0.19Ga0.81)2O3/Ga2O3 HFET
CN Saha, A Vaidya, U Singisetti
Compound Semiconductor Week (48th ISCS and 33rd IPRM), University of …, 2022
2022
Self-heating in ultra-wide bandgap n-type SrSnO
P Golani, CN Saha, PP Sundaram
2022
β-(Al0.19Ga0.81)2O3/Ga2O3 enhancement mode HFETs with high ft-Lg product
CN Saha, A Vaidya, U Singisetti
26th Lester Eastman Conference, University of Notre Dame, Indiana, USA …, 2021
2021
Magnetic proximity effects in graphene/chromia heterostructures
A Mahmood, W Echtenkamp, CP Kwan, M Randle, C Saha, P Dowben, ...
JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020
2020
Fabrication of Micron Scale Test Structures for Magneto-Electric Chromia (Cr2O3) Thin Films
CN Saha
State University of New York at Buffalo, 2020
2020
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