| Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 symposium on VLSI technology, T230-T231, 2017 | 770 | 2017 |
| Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation AI Khan, CW Yeung, C Hu, S Salahuddin 2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011 | 369 | 2011 |
| Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages A Padilla, CW Yeung, C Shin, C Hu, TJK Liu 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 219 | 2008 |
| Single crystal functional oxides on silicon SR Bakaul, CR Serrao, M Lee, CW Yeung, A Sarker, SL Hsu, AK Yadav, ... Nature communications 7 (1), 10547, 2016 | 197 | 2016 |
| Ultrathin body InAs tunneling field-effect transistors on Si substrates AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey Applied Physics Letters 98 (11), 2011 | 112 | 2011 |
| Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond CC Liu, E Franke, Y Mignot, R Xie, CW Yeung, J Zhang, C Chi, C Zhang, ... Nature Electronics 1 (10), 562-569, 2018 | 102 | 2018 |
| Low power negative capacitance FETs for future quantum-well body technology CW Yeung, AI Khan, A Sarker, S Salahuddin, C Hu 2013 International symposium on VLSI technology, systems and application …, 2013 | 77 | 2013 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 76 | 2018 |
| Dense electron system from gate-controlled surface metal–insulator transition K Liu, D Fu, J Cao, J Suh, KX Wang, C Cheng, DF Ogletree, H Guo, ... Nano letters 12 (12), 6272-6277, 2012 | 71 | 2012 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 65 | 2016 |
| Programming characteristics of the steep turn-on/off feedback FET (FBFET) CW Yeung, A Padilla, TJK Liu, C Hu 2009 Symposium on VLSI Technology, 176-177, 2009 | 60 | 2009 |
| High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ... 2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017 | 58 | 2017 |
| Air spacer for 10nm FinFET CMOS and beyond K Cheng, C Park, C Yeung, S Nguyen, J Zhang, X Miao, M Wang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2016 | 53 | 2016 |
| Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs CW Yeung, AI Khan, S Salahuddin, C Hu 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013 | 37 | 2013 |
| Semiconductor device and method of forming the semiconductor device RH Chao, H Jagannathan, CH Lee, CW Yeung, J Zhang US Patent 10,079,233, 2018 | 34* | 2018 |
| Non-hysteretic Negative Capacitance FET with Sub-30mV/dec Swing over 106X Current Range and ION of 0.3 mA/μm without Strain Enhancement at 0.3 V VDD CW Yeung, AI Khan, JY Cheng, S Salahuddin, C Hu Conf. Simul. Semicond. Processes Devices, 257, 2012 | 32 | 2012 |
| Quantum well InAs/AlSb/GaSb vertical tunnel FET with HSQ mechanical support Y Zeng, CI Kuo, C Hsu, M Najmzadeh, A Sachid, R Kapadia, C Yeung, ... IEEE Transactions on Nanotechnology 14 (3), 580-584, 2015 | 27 | 2015 |
| Sacrificial cap for forming semiconductor contact P Adusumilli, Z Liu, S Mochizuki, J Yang, CW Yeung US Patent 9,805,989, 2017 | 21 | 2017 |
| Nanosheet FET with wrap-around inner spacer CW Yeung, C Zhang US Patent 9,842,914, 2017 | 20 | 2017 |
| Uniform low-k inner spacer module in gate-all-around (GAA) transistors RH Chao, CH Lee, CW Yeung, J Zhang US Patent 10,243,060, 2019 | 19 | 2019 |
