| Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim, MH Cho, S Kim, JK Jeong Advanced Materials 35 (43), 2204663, 2023 | 40 | 2023 |
| High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and … CH Choi, T Kim, S Ueda, YS Shiah, H Hosono, J Kim, JK Jeong ACS Applied Materials & Interfaces 13 (24), 28451-28461, 2021 | 36 | 2021 |
| Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity T Kim, CH Choi, P Byeon, M Lee, A Song, KB Chung, S Han, SY Chung, ... npj 2D Materials and Applications 6 (1), 4, 2022 | 35 | 2022 |
| Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor S Yim, T Kim, B Yoo, H Xu, Y Youn, S Han, JK Jeong ACS applied materials & interfaces 11 (50), 47025-47036, 2019 | 32 | 2019 |
| Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering T Kim, JK Kim, B Yoo, H Xu, S Yim, SH Kim, HY Yu, JK Jeong Journal of Materials Chemistry C 8 (1), 201-208, 2020 | 23 | 2020 |
| Material design of new p-type tin oxyselenide semiconductor through valence band engineering and its device application T Kim, B Yoo, Y Youn, M Lee, A Song, KB Chung, S Han, JK Jeong ACS applied materials & interfaces 11 (43), 40214-40221, 2019 | 21 | 2019 |
| Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200° C HJ Park, T Kim, MJ Kim, H Lee, JH Lim, JK Jeong Ceramics International 48 (9), 12806-12812, 2022 | 18 | 2022 |
| Recent progress and perspectives of field‐effect transistors based on p‐type oxide semiconductors T Kim, JK Jeong physica status solidi (RRL)–Rapid Research Letters 16 (1), 2100394, 2022 | 18 | 2022 |
| High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction GB Kim, N On, T Kim, CH Choi, JS Hur, JH Lim, JK Jeong Small Methods 7 (7), 2201522, 2023 | 13 | 2023 |
| Origin of ambipolar behavior in p-type tin monoxide semiconductors: Impact of oxygen vacancy defects T Kim, MJ Kim, H Lee, H Xu, CH Choi, JK Kim, JK Jeong IEEE Transactions on Electron Devices 68 (9), 4467-4472, 2021 | 13 | 2021 |
| Hydrogen-doping-enabled boosting of the carrier mobility and stability in amorphous IGZTO transistors J Lee, CH Choi, T Kim, J Hur, MJ Kim, EH Kim, JH Lim, Y Kang, JK Jeong ACS Applied Materials & Interfaces 14 (51), 57016-57027, 2022 | 11 | 2022 |
| High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition MH Cho, CH Choi, MJ Kim, JS Hur, T Kim, JK Jeong ACS Applied Materials & Interfaces 15 (15), 19137-19151, 2023 | 9 | 2023 |
| High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions H Xu, T Kim, HS Han, MJ Kim, JS Hur, CH Choi, JH Chang, JK Jeong ACS Applied Materials & Interfaces 14 (2), 3008-3017, 2022 | 9 | 2022 |
| Universal Metal–Interlayer–Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation JK Kim, SH Kim, T Kim, HY Yu IEEE Transactions on Electron Devices 65 (11), 4982-4987, 2018 | 7 | 2018 |
| Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors CH Choi, T Kim, MJ Kim, SH Yoon, JK Jeong IEEE Transactions on Electron Devices 70 (5), 2317-2323, 2023 | 5 | 2023 |
| High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder T Kim, CH Choi, SE Kim, JK Kim, J Jang, SC Choi, J Noh, KS Park, J Kim, ... IEEE Electron Device Letters 44 (2), 269-272, 2022 | 5 | 2022 |
| High mobility p-channel tin monoxide thin-film transistors with hysteresis-free like behavior T Kim, H Lee, SE Kim, JK Kim, JK Jeong Applied Physics Letters 121 (14), 2022 | 4 | 2022 |
| P‐13: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach MH Cho, H Seol, N On, TK Kim, PS Yun, JU Bae, KS Park, JK Jeong SID Symposium Digest of Technical Papers 50 (1), 1259-1262, 2019 | 4 | 2019 |
| Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors GB Kim, T Kim, CH Choi, SW Chung, JK Jeong IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Low-power driven broadband phototransistor with a PbS/IGO/HfO 2 stack H Xu, HS Han, JS Hur, MJ Kim, CH Choi, T Kim, JH Chang, JK Jeong Journal of Materials Chemistry C 11 (4), 1569-1578, 2023 | 2 | 2023 |
Jae Kyeong JeongHanyang Univ.Verified email at hanyang.ac.kr
