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Bingjie Dang
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An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing
K Liu, T Zhang, B Dang, L Bao, L Xu, C Cheng, Z Yang, R Huang, Y Yang
Nature Electronics 5 (11), 761-773, 2022
1302022
A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors
B Dang, Q Wu, F Song, J Sun, M Yang, X Ma, H Wang, Y Hao
Nanoscale 10 (43), 20089-20095, 2018
792018
Multilayer Reservoir Computing Based on Ferroelectric αIn2Se3 for Hierarchical Information Processing
K Liu, B Dang, T Zhang, Z Yang, L Bao, L Xu, C Cheng, R Huang, Y Yang
Advanced Materials, 2108826, 2022
682022
Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation
Q Wu‡, B Dang‡, C Lu, G Xu, G Yang, J Wang, X Chuai, N Lu, D Geng, ...
Nano Letters 20 (11), 8015-8023, 2020
582020
Physically transient threshold switching device based on magnesium oxide for security application
J Sun, H Wang, F Song, Z Wang, B Dang, M Yang, H Gao, X Ma, Y Hao
Small 14 (27), 1800945, 2018
522018
Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ...
APL Materials 7 (7), 2019
382019
Solution-processed physically transient resistive memory based on magnesium oxide
F Song, H Wang, J Sun, B Dang, H Gao, M Yang, X Ma, Y Hao
IEEE Electron Device Letters 40 (2), 193-195, 2018
282018
Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications
B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ...
IEEE Electron Device Letters 40 (7), 1096-1099, 2019
262019
Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications
Q Wu, G Yang, C Lu, G Xu, J Wang, B Dang, Y Gong, X Shi, X Chuai, N Lu, ...
IEEE Transactions on Electron Devices 66 (9), 4087-4091, 2019
242019
Physically transient memristor synapse based on embedding magnesium nanolayer in oxide for security neuromorphic electronics
B Dang, Q Wu, J Sun, M Zhao, S Wang, F Song, M Yang, X Ma, H Wang, ...
IEEE Electron Device Letters 40 (8), 1265-1268, 2019
242019
Onephototransistoronememristor Array with Highlinearity Lighttunable Weight for Optic Neuromorphic Computing
B Dang, K Liu, X Wu, Z Yang, L Xu, Y Yang, R Huang
Advanced Materials, 2204844, 2022
222022
Spike-Enabled Audio Learning in Multilevel SynapticMemristor Array-Based Spiking Neural Network
X Wu‡, B Dang‡, H Wang, X Wu, Y Yang
Advanced Intelligent Systems, 2100151, 2021
202021
Physically transient memristive synapse with short-term plasticity based on magnesium oxide
J Sun, H Wang, Z Wang, F Song, Q Zhu, B Dang, H Gao, M Yang, X Ma, ...
IEEE Electron Device Letters 40 (5), 706-709, 2019
192019
Physically transient optic-neural synapse for secure in-sensor computing
B Dang, L Ma, L Yan, S Wang, K Liu, L Xu, C Cheng, M Zhao, Y Yang, ...
IEEE Electron Device Letters 41 (11), 1641-1644, 2020
142020
Physically transient W/ZnO/MgO/W Schottky diode for rectifying and artificial synapse
S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao
IEEE Electron Device Letters 41 (6), 844-847, 2020
112020
Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing
C Cheng, Y Wang, L Xu, K Liu, B Dang, Y Lu, X Yan, R Huang, Y Yang
Advanced Electronic Materials, 2100669, 2021
102021
Neuromorphic Artificial Vision Systems Based on Reconfigurable IonModulated Memtransistors
Z Yang, T Zhang, K Liu, B Dang, L Xu, Y Yang, R Huang
Advanced Intelligent Systems, 2300026, 2023
42023
1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing
B Dang, L Lv, H Wang, L Cai, B Yan, K Liu, L Xu, Y Hao, R Huang, Y Yang
IEEE Electron Device Letters 43 (8), 1223-1226, 2022
42022
Physically Transient Diode with Ultrathin Tunneling layer as Selector for Bipolar One Diode-One Resistor Memory
S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao
IEEE Electron Device Letters, 2021
42021
Highly Uniform TwoTerminal Artificial Synapses Based on Polycrystalline Hf0.5Zr0.5O2 for Sparsified Back Propagation Networks
Y Lu, K Liu, J Yang, T Zhang, C Cheng, B Dang, L Xu, J Zhu, Q Huang, ...
Advanced Electronic Materials 6 (8), 2000204, 2020
42020
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