| An optoelectronic synapse based on α-In2Se3 with controllable temporal dynamics for multimode and multiscale reservoir computing K Liu, T Zhang, B Dang, L Bao, L Xu, C Cheng, Z Yang, R Huang, Y Yang Nature Electronics 5 (11), 761-773, 2022 | 154 | 2022 |
| A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors B Dang, Q Wu, F Song, J Sun, M Yang, X Ma, H Wang, Y Hao Nanoscale 10 (43), 20089-20095, 2018 | 81 | 2018 |
| Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing K Liu, B Dang, T Zhang, Z Yang, L Bao, L Xu, C Cheng, R Huang, Y Yang Advanced Materials, 2108826, 2022 | 79 | 2022 |
| Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation Q Wu‡, B Dang‡, C Lu, G Xu, G Yang, J Wang, X Chuai, N Lu, D Geng, ... Nano Letters 20 (11), 8015-8023, 2020 | 62 | 2020 |
| Physically transient threshold switching device based on magnesium oxide for security application J Sun, H Wang, F Song, Z Wang, B Dang, M Yang, H Gao, X Ma, Y Hao Small 14 (27), 1800945, 2018 | 53 | 2018 |
| Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ... APL Materials 7 (7), 2019 | 39 | 2019 |
| Solution-processed physically transient resistive memory based on magnesium oxide F Song, H Wang, J Sun, B Dang, H Gao, M Yang, X Ma, Y Hao IEEE Electron Device Letters 40 (2), 193-195, 2018 | 28 | 2018 |
| Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ... IEEE Electron Device Letters 40 (7), 1096-1099, 2019 | 26 | 2019 |
| One‐phototransistor‐one‐memristor Array with High‐linearity Light‐tunable Weight for Optic Neuromorphic Computing B Dang, K Liu, X Wu, Z Yang, L Xu, Y Yang, R Huang Advanced Materials, 2204844, 2022 | 25 | 2022 |
| Physically transient memristor synapse based on embedding magnesium nanolayer in oxide for security neuromorphic electronics B Dang, Q Wu, J Sun, M Zhao, S Wang, F Song, M Yang, X Ma, H Wang, ... IEEE Electron Device Letters 40 (8), 1265-1268, 2019 | 25 | 2019 |
| Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications Q Wu, G Yang, C Lu, G Xu, J Wang, B Dang, Y Gong, X Shi, X Chuai, N Lu, ... IEEE Transactions on Electron Devices 66 (9), 4087-4091, 2019 | 24 | 2019 |
| Spike-Enabled Audio Learning in Multilevel SynapticMemristor Array-Based Spiking Neural Network X Wu‡, B Dang‡, H Wang, X Wu, Y Yang Advanced Intelligent Systems, 2100151, 2021 | 23 | 2021 |
| Physically transient memristive synapse with short-term plasticity based on magnesium oxide J Sun, H Wang, Z Wang, F Song, Q Zhu, B Dang, H Gao, M Yang, X Ma, ... IEEE Electron Device Letters 40 (5), 706-709, 2019 | 19 | 2019 |
| Physically transient optic-neural synapse for secure in-sensor computing B Dang, L Ma, L Yan, S Wang, K Liu, L Xu, C Cheng, M Zhao, Y Yang, ... IEEE Electron Device Letters 41 (11), 1641-1644, 2020 | 14 | 2020 |
| Physically transient W/ZnO/MgO/W Schottky diode for rectifying and artificial synapse S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao IEEE Electron Device Letters 41 (6), 844-847, 2020 | 11 | 2020 |
| Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing C Cheng, Y Wang, L Xu, K Liu, B Dang, Y Lu, X Yan, R Huang, Y Yang Advanced Electronic Materials, 2100669, 2021 | 10 | 2021 |
| Highly Uniform Two‐Terminal Artificial Synapses Based on Polycrystalline Hf0.5Zr0.5O2 for Sparsified Back Propagation Networks Y Lu, K Liu, J Yang, T Zhang, C Cheng, B Dang, L Xu, J Zhu, Q Huang, ... Advanced Electronic Materials 6 (8), 2000204, 2020 | 6 | 2020 |
| Neuromorphic Artificial Vision Systems Based on Reconfigurable Ion‐Modulated Memtransistors Z Yang, T Zhang, K Liu, B Dang, L Xu, Y Yang, R Huang Advanced Intelligent Systems 5 (8), 2300026, 2023 | 5 | 2023 |
| Physically Transient Diode with Ultrathin Tunneling layer as Selector for Bipolar One Diode-One Resistor Memory S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao IEEE Electron Device Letters, 2021 | 5 | 2021 |
| 1-HEMT-1-memristor with hardware encryptor for privacy-preserving image processing B Dang, L Lv, H Wang, L Cai, B Yan, K Liu, L Xu, Y Hao, R Huang, Y Yang IEEE Electron Device Letters 43 (8), 1223-1226, 2022 | 4 | 2022 |
Yuchao YangPeking University在 pku.edu.cn 的电子邮件经过验证
