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Bingjie Dang
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A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors
B Dang, Q Wu, F Song, J Sun, M Yang, X Ma, H Wang, Y Hao
Nanoscale 10 (43), 20089-20095, 2018
452018
Physically transient threshold switching device based on magnesium oxide for security application
J Sun, H Wang, F Song, Z Wang, B Dang, M Yang, H Gao, X Ma, Y Hao
Small 14 (27), 1800945, 2018
382018
Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ...
APL Materials 7 (7), 071114, 2019
242019
Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation
Q Wu‡, B Dang‡, C Lu, G Xu, G Yang, J Wang, X Chuai, N Lu, D Geng, ...
Nano Letters 20 (11), 8015-8023, 2020
172020
Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications
B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ...
IEEE Electron Device Letters 40 (7), 1096-1099, 2019
172019
Physically transient memristor synapse based on embedding magnesium nanolayer in oxide for security neuromorphic electronics
B Dang, Q Wu, J Sun, M Zhao, S Wang, F Song, M Yang, X Ma, H Wang, ...
IEEE Electron Device Letters 40 (8), 1265-1268, 2019
162019
Solution-processed physically transient resistive memory based on magnesium oxide
F Song, H Wang, J Sun, B Dang, H Gao, M Yang, X Ma, Y Hao
IEEE Electron Device Letters 40 (2), 193-195, 2018
152018
Room temperature-processed a-IGZO Schottky diode for rectifying circuit and bipolar 1D1R crossbar applications
Q Wu, G Yang, C Lu, G Xu, J Wang, B Dang, Y Gong, X Shi, X Chuai, N Lu, ...
IEEE Transactions on Electron Devices 66 (9), 4087-4091, 2019
142019
Physically transient memristive synapse with short-term plasticity based on magnesium oxide
J Sun, H Wang, Z Wang, F Song, Q Zhu, B Dang, H Gao, M Yang, X Ma, ...
IEEE Electron Device Letters 40 (5), 706-709, 2019
112019
Physically transient W/ZnO/MgO/W Schottky diode for rectifying and artificial synapse
S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao
IEEE Electron Device Letters 41 (6), 844-847, 2020
42020
Physically transient optic-neural synapse for secure in-sensor computing
B Dang, L Ma, L Yan, S Wang, K Liu, L Xu, C Cheng, M Zhao, Y Yang, ...
IEEE Electron Device Letters 41 (11), 1641-1644, 2020
32020
Highly Uniform TwoTerminal Artificial Synapses Based on Polycrystalline Hf0.5Zr0.5O2 for Sparsified Back Propagation Networks
Y Lu, K Liu, J Yang, T Zhang, C Cheng, B Dang, L Xu, J Zhu, Q Huang, ...
Advanced Electronic Materials 6 (8), 2000204, 2020
22020
Physically Transient Resistive Memory with Programmable Switching Behaviors in MgO-Mo Based Devices
S Wang, B Dang, J Sun, F Song, M Zhao, M Yang, X Ma, H Wang, Y Hao
IEEE Electron Device Letters 41 (4), 553-556, 2020
22020
Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing
C Cheng, Y Wang, L Xu, K Liu, B Dang, Y Lu, X Yan, R Huang, Y Yang
Advanced Electronic Materials, 2100669, 2021
12021
Physically Transient Diode with Ultrathin Tunneling layer as Selector for Bipolar One Diode-One Resistor Memory
S Wang, B Dang, J Sun, M Zhao, M Yang, X Ma, H Wang, Y Hao
IEEE Electron Device Letters, 2021
12021
TaOx synapse array based on ion profile engineering for high accuracy neuromorpic computing
J Yang, J Zhu, B Dang, T Zhang, Q Duan, L Xu, K Liu, Z Lin, R Huang, ...
2020 China Semiconductor Technology International Conference (CSTIC), 1-4, 2020
12020
Multilayer Reservoir Computing Based on Ferroelectric αIn2Se3 for Hierarchical Information Processing
K Liu, B Dang, T Zhang, Z Yang, L Bao, L Xu, C Cheng, R Huang, Y Yang
Advanced Materials, 2108826, 2022
2022
Spike-Enabled Audio Learning in Multilevel SynapticMemristor Array-Based Spiking Neural Network
X Wu#, B Dang#, H Wang, X Wu, Y Yang
Advanced Intelligent Systems, 2100151, 2021
2021
Hf1-xZrxO2based bipolar selector with high uniformity and high selectivity for large-scale integration of memristor crossbars
C Cheng, K Liu, B Dang, L Xu, Z Yang, X Yan, Y Yang, R Huang
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021
2021
Secure Electronics: Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application (Small 27/2018)
J Sun, H Wang, F Song, Z Wang, B Dang, M Yang, H Gao, X Ma, Y Hao
Small 14 (27), 1870127, 2018
2018
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