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Ryan M Stein
Ryan M Stein
Verified email at umd.edu
Title
Cited by
Cited by
Year
Tuning the electronic structure of silicene and germanene by biaxial strain and electric field
JA Yan, SP Gao, R Stein, G Coard
Physical Review B 91 (24), 245403, 2015
1652015
Electron-phonon coupling in two-dimensional silicene and germanene
JA Yan, R Stein, DM Schaefer, XQ Wang, MY Chou
Physical Review B 88 (12), 121403, 2013
1322013
The effect of strain on tunnel barrier height in silicon quantum devices
RM Stein, MD Stewart Jr
Journal of Applied Physics 128 (2), 024303, 2020
52020
Alternatives to aluminum gates for silicon quantum devices: Defects and strain
RM Stein, ZS Barcikowski, SJ Pookpanratana, JM Pomeroy, ...
Journal of Applied Physics 130 (11), 115102, 2021
42021
Electric-field effects on the optical vibrations in AB-stacked bilayer graphene
R Stein, D Hughes, JA Yan
Physical Review B 87 (10), 100301, 2013
42013
Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits
Y Hong, AN Ramanayaka, R Stein, MD Stewart, JM Pomeroy
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2021
22021
Reduction of charge offset drift using plasma oxidized aluminum in SETs
Y Hong, R Stein, MD Stewart, NM Zimmerman, JM Pomeroy
Scientific reports 10 (1), 1-9, 2020
22020
Fabrication of petal-shaped masks for suppression of the on-axis Poisson spot in telescope systems
R Shiri, R Stein, K Murphy, K Hagopian, S Salari, S Sankar, J Hagopian, ...
Review of Scientific Instruments 87 (4), 043112, 2016
22016
Developing Single Layer MOS Quantum Dots for Diagnostic Qubits
Y Hong, A Ramanayaka, RM Stein, JM Pomeroy
2020
Reduction of charge offset drift using plasma oxidized aluminum in SETs
H Yanxue, R Stein, MD Stewart Jr, NM Zimmerman, JM Pomeroy
Scientific Reports (Nature Publisher Group) 10 (1), 2020
2020
Gate Induced Strain in Silicon MOS-based Tunnel Junction Devices
R Stein, NM Zimmerman, MD Stewart
APS March Meeting Abstracts 2017, H26. 005, 2017
2017
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Articles 1–11