Stephan Menzel
Stephan Menzel
Senior Scientist, Forschungszentrum Juelich
Verified email at
Cited by
Cited by
Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches
S Menzel, M Waters, A Marchewka, U Böttger, R Dittmann, R Waser
Advanced Functional Materials 21 (23), 4487-4492, 2011
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
X Guo, C Schindler, S Menzel, R Waser
Applied Physics Letters 91 (13), 2007
Towards oxide electronics: a roadmap
M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ...
Applied surface science 482, 1-93, 2019
Physics of the switching kinetics in resistive memories
S Menzel, U Böttger, M Wimmer, M Salinga
Advanced functional materials 25 (40), 6306-6325, 2015
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
S Starschich, S Menzel, U Böttger
Applied Physics Letters 108 (3), 2016
Switching kinetics of electrochemical metallization memory cells
S Menzel, S Tappertzhofen, R Waser, I Valov
Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013
Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM
D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ...
Advanced materials 29 (23), 1700212, 2017
Nanoionic resistive switching memories: On the physical nature of the dynamic reset process
A Marchewka, B Roesgen, K Skaja, H Du, CL Jia, J Mayer, V Rana, ...
Advanced Electronic Materials 2 (1), 1500233, 2016
Simulation of multilevel switching in electrochemical metallization memory cells
S Menzel, U Böttger, R Waser
Journal of applied physics 111 (1), 2012
Realization of boolean logic functionality using redox‐based memristive devices
A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ...
Advanced functional materials 25 (40), 6414-6423, 2015
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
A complementary resistive switch-based crossbar array adder
A Siemon, S Menzel, R Waser, E Linn
IEEE journal on emerging and selected topics in circuits and systems 5 (1 …, 2015
Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5-based ReRAM devices
W Kim, S Menzel, DJ Wouters, Y Guo, J Robertson, B Roesgen, R Waser, ...
Nanoscale 8 (41), 17774-17781, 2016
Applicability of well-established memristive models for simulations of resistive switching devices
E Linn, A Siemon, R Waser, S Menzel
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8), 2402-2410, 2014
Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
F Cüppers, S Menzel, C Bengel, A Hardtdegen, M Von Witzleben, ...
APL materials 7 (9), 2019
Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells
A Hardtdegen, C La Torre, F Cüppers, S Menzel, R Waser, ...
IEEE transactions on electron devices 65 (8), 3229-3236, 2018
Subfilamentary networks cause cycle-to-cycle variability in memristive devices
C Baeumer, R Valenta, C Schmitz, A Locatelli, TO Mentes, SP Rogers, ...
ACS nano 11 (7), 6921-6929, 2017
Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model
C Funck, S Menzel, N Aslam, H Zhang, A Hardtdegen, R Waser, ...
Advanced electronic materials 2 (7), 1600169, 2016
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
C Baeumer, C Schmitz, A Marchewka, DN Mueller, R Valenta, J Hackl, ...
Nature communications 7 (1), 12398, 2016
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