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Jiadi Zhu
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引用次数
引用次数
年份
A comprehensive review on emerging artificial neuromorphic devices
J Zhu, T Zhang, Y Yang, R Huang
Applied Physics Reviews 7 (1), 2020
5292020
Ion gated synaptic transistors based on 2D van der Waals crystals with tunable diffusive dynamics
J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ...
Advanced Materials 30 (21), 1800195, 2018
4262018
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Y Zhang, Z Wang, J Zhu, Y Yang, M Rao, W Song, Y Zhuo, X Zhang, ...
Applied Physics Reviews 7 (1), 2020
2742020
Dual-Gated MoS2 Neuristor for Neuromorphic Computing
L Bao, J Zhu, Z Yu, R Jia, Q Cai, Z Wang, L Xu, Y Wu, Y Yang, Y Cai, ...
ACS applied materials & interfaces 11 (44), 41482-41489, 2019
842019
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ...
Nature Nanotechnology 18 (5), 456-463, 2023
482023
Designing artificial two-dimensional landscapes via atomic-layer substitution
Y Guo, Y Lin, K Xie, B Yuan, J Zhu, PC Shen, AY Lu, C Su, E Shi, K Zhang, ...
Proceedings of the National Academy of Sciences 118 (32), e2106124118, 2021
482021
Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors
J Wang, R Jia, Q Huang, C Pan, J Zhu, H Wang, C Chen, Y Zhang, ...
Scientific reports 8 (1), 17755, 2018
432018
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High Ratio
Y Zhao, C Wu, Q Huang, C Chen, J Zhu, L Guo, R Jia, Z Lv, Y Yang, M Li, ...
IEEE Electron Device Letters 38 (5), 540-543, 2017
402017
Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing
B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ...
APL Materials 7 (7), 2019
382019
Integrated biosensor platform based on graphene transistor arrays for real-time high-accuracy ion sensing
M Xue, C Mackin, WH Weng, J Zhu, Y Luo, SXL Luo, AY Lu, M Hempel, ...
Nature communications 13 (1), 5064, 2022
352022
Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High Ratio and Steep Swing
J Zhu, Y Zhao, Q Huang, C Chen, C Wu, R Jia, R Huang
IEEE Electron Device Letters 38 (9), 1200-1203, 2017
322017
Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts
Y Guo‡, E Shi‡, J Zhu‡, PC Shen, J Wang, Y Lin, Y Mao, S Deng, B Li, ...
Nature Nanotechnology, 1-7, 2022
272022
Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications
B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ...
IEEE Electron Device Letters 40 (7), 1096-1099, 2019
262019
Interfacial redox processes in memristive devices based on valence change and electrochemical metallization
K Liu, L Qin, X Zhang, J Zhu, X Sun, K Yang, Y Cai, Y Yang, R Huang
Faraday Discussions 213, 41-52, 2019
202019
Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity
C Cheng, Y Li, T Zhang, Y Fang, J Zhu, K Liu, L Xu, Y Cai, X Yan, Y Yang, ...
Journal of Applied Physics 124 (15), 2018
202018
New understanding of random telegraph noise amplitude in tunnel FETs
C Chen, Q Huang, J Zhu, Y Zhao, L Guo, R Huang
IEEE Transactions on Electron Devices 64 (8), 3324-3330, 2017
162017
Combinational access tunnel FET SRAM for ultra-low power applications
L Yang, J Zhu, C Chen, Z Wang, Z Liu, Q Huang, L Ye, R Huang
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
122018
Voltage-controlled magnetoresistance in silicon nanowire transistors
Y Zhang, J Fan, Q Huang, J Zhu, Y Zhao, M Li, Y Wu, R Huang
Scientific Reports 8 (1), 15194, 2018
82018
Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)
J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ...
Advanced Materials 30 (21), 1870149, 2018
72018
New insights into energy efficiency of tunnel FET with awareness of source doping gradient variation
C Chen, Q Huang, J Zhu, Z Wang, Y Zhao, R Jia, L Guo, R Huang
IEEE Transactions on Electron Devices 65 (5), 2003-2009, 2018
62018
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