‪Dong-Gyu Jin‬ - ‪Google Scholar‬

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Citations	30	30
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2022202320249 14 7

Co-authors

Park, EuyjinKorea UniversityVerified email at korea.ac.kr
Seunghwan KimKorea Institute of Science and TechnologyVerified email at kist.re.kr
Seung-Geun KimKorea UniversityVerified email at korea.ac.kr
June Parkthe Department of Nano Semiconductor Engineering, Korea UniversityVerified email at korea.ac.kr
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr

Dong-Gyu Jin

Dong-Gyu Jin

School of Electrical Engineering, Korea University

Verified email at korea.ac.kr

semiconductor device solid-state electrolyte neuromorphic device artificial synapse


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Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor DG Jin, SH Kim, SG Kim, J Park, E Park, HY Yu Small 17 (30), 2100242, 2021	15	2021
Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System J Park, E Park, SG Kim, DG Jin, HY Yu ACS Applied Electronic Materials 3 (12), 5584-5591, 2021	11	2021
Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses DG Jin, SG Kim, H Jeon, EJ Park, SH Kim, JY Kim, HY Yu Materials Today Nano 22, 100320, 2023	4	2023
First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing DG Jin, HY Yu Small, 2309467, 2023		2023
Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor SH Hwang, SH Kim, SG Kim, MS Kim, KH Han, S Song, JH Kim, E Park, ... Materials Today Advances 18, 100367, 2023		2023

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