Ravindra Singh Pokharia

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Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
Krista R KhiangteAssistant Professor at Indian Institute of Technology GandhinagarVerified email at iitgn.ac.in
Jaswant S RathoreIIT BombayVerified email at phy.iitb.ac.in
Dr. Sudipta DasPh.D. Student, Indian Institute of Technology BombayVerified email at iitb.ac.in
Jori LemettinenAalto UniversityVerified email at infineon.com
Sami SuihkonenSenior Scientist / VTTVerified email at vtt.fi
Ritam SarkarR&D Engineer, IMEC LeuvenVerified email at imec.be
Swarup DebHumboldt Post Doc, Physics, University of Rostock, GermanyVerified email at uni-rostock.de
Dinesh KabraJNCASR, India; OE Group, Cavendish Laboratory, Cambridge, UK, Dept of Phys, IIT BOMBAY - INDIAVerified email at phy.iitb.ac.in
Dhiman NagPostdoc, Eindhoven university of technologyVerified email at tue.nl
Bhanu B. UpadhyayGaN Device Characterization and Modelling, Infineon Technologies, MunichVerified email at iitb.ac.in
Pradeep SarinDepartment of Physics IIT BombayVerified email at iitb.ac.in
Elizabeth GeorgePost-Doctoral Research AssistantVerified email at qmul.ac.uk

Ravindra Singh Pokharia

University of Southampton

Verified email at soton.ac.uk

Silicon Photonics and Integrated Photonics Si-Ge and III-Nitride Optoelectronics Semiconductor device physics Photodetectors


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Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd₂O₃ (111)/Si (111) heterostructures KR Khiangte, JS Rathore, S Das, RS Pokharia, J Schmidt, HJ Osten, ... Journal of Applied Physics 124 (6), 065704, 2018	16	2018
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer RS Pokharia, R Sarkar, S Singh, S Deb, S Suihkonen, J Lemettinen, ... IEEE Transactions on Electron Devices 68 (6), 2796-2803, 2021	12	2021
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I_ON/I_OFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021	10	2021
On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy S Das, KR Khiangte, RS Fandan, JS Rathore, RS Pokharia, S Mahapatra, ... Current Applied Physics 17 (3), 327-332, 2017	6	2017
Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si (111), grown by molecular beam epitaxy RS Pokharia, KR Khiangte, JS Rathore, J Schmidt, HJ Osten, A Laha, ... Optical Components and Materials XVI 10914, 220-226, 2019	2	2019
Improvement of crystal quality and surface morphology of Ge/Gd2O3 /Si(111) epitaxial layers by cyclic annealing and regrowth SM Alisha Nanwani, Ravindra Singh Pokharia, Jan Schmidt, H J Osten Journal of Physics D: Applied Physics, 2021	1	2021
Performance of semi-insulating metal-semiconductor-metal GaN prototype devices as ionizing radiation detector E George, P Sarin, R Singh, A Laha Journal of Physics: Conference Series 2374 (1), 012136, 2022		2022
Novel Wide Band Gap Semiconductor Devices for Ionizing Radiation Detection AL Elizabeth George, Ravindra Singh, Pradeep Sarin XXIII DAE High Energy Physics Symposium 261, 1107-1111, 2021		2021

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