| Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09 W Yang, Y Li, Y Li, Z Hu, F Xie, C He, S Wang, B Zhou, H He, W Khan, ... Microelectronics Reliability 99, 119-124, 2019 | 20 | 2019 |
| Simulation studies on the transient dose rate effect of analog delay locked loops Y Li, Y Guo, C He, J Liu, Y Li, P Li Microelectronics Reliability 121, 114149, 2021 | 9 | 2021 |
| Single-event effects induced by medium-energy protons in 28 nm system-on-chip WT Yang, Q Yin, Y Li, G Guo, YH Li, CH He, YW Zhang, FQ Zhang, ... Nuclear Science and Techniques 30 (10), 151, 2019 | 8 | 2019 |
| Experimental study of transient dose rate effects of two level-shifting transceivers and simulations on their ESD circuits Y Guo, Y Li, J Li, C He, R Li, Y Li, P Li, J Liu IEEE Transactions on Nuclear Science 69 (5), 1157-1166, 2022 | 7 | 2022 |
| Investigation of single event effect in 28-nm system-on-chip with multi patterns WT Yang, YH Li, YX Guo, HY Zhao, Y Li, P Li, CH He, G Guo, J Liu, ... Chinese Physics B 29 (10), 108504, 2020 | 7 | 2020 |
| Electron inducing soft errors in 28 nm system-on-Chip W Yang, Y Li, W Zhang, Y Guo, H Zhao, J Wei, Y Li, C He, K Chen, G Guo, ... Radiation Effects and Defects in Solids 175 (7-8), 745-754, 2020 | 6 | 2020 |
| Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation JN Wei, Y Li, WT Yang, CH He, YH Li, H Zang, P Li, JX Zhang, G Guo Science China Technological Sciences 63 (5), 851-858, 2020 | 6 | 2020 |
| Experimental study of transient dose rate effect on system-in-package SZ0501 Y Li, J Li, Y Guo, C He, R Li, W Chen, W Liao, Y Li, P Li, J Liu, Z Peng IEEE Transactions on Nuclear Science 69 (8), 1840-1849, 2022 | 5 | 2022 |
| Simulation of transient dose rate effect on analog phase locked loop Y Li, Y Guo, W Liao, J Liu, Z Peng, C He, Y Li, P Li Microelectronics Reliability 132, 114531, 2022 | 5 | 2022 |
| Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09 H Zhi-Liang, Y Wei-Tao, L Yong-Hong, L Yang, H Chao-Hui, W Song-Lin, ... Acta Physica Sinica 68 (23), 2019 | 5 | 2019 |
| System-on-chip single event effect hardening design and validation using proton irradiation W Yang, Y Li, G Guo, C He, L Wu Nuclear Engineering and Technology 55 (3), 1015-1020, 2023 | 2 | 2023 |
| Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model Y Li, J Wei, C He, W Yang, Y Li, Y Guo 2021 4th International Conference on Radiation Effects of Electronic Devices …, 2021 | 2 | 2021 |
| Transient Dose Rate Effect between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study Y Li, Y Guo, J Li, C He, Z Peng, J Liu, R Li, H Zhao, W Chen, Y Li, P Li, ... IEEE Transactions on Nuclear Science, 2023 | | 2023 |
| Investigation of Transient Dose-rate Effect on High-Speed Comparator SB9696 J Li, Y Li, Y Guo, R Li, W Chen, Y Liu, Z Peng, J Liu, C He, P Li IEEE Transactions on Nuclear Science, 2023 | | 2023 |
| Feasibility and equivalence analysis of transient dose rate effect simulation by pulsed laser in level-shifting transceiver and TCAD simulation on its ESD circuits Y Guo, Y Li, Z Peng, J Liu, P Li, W Li, C He, J Li, R Li, Y Li AIP Advances 13 (4), 2023 | | 2023 |
| Key Factors of Laser-Induced Single Event Transients on Different SiGe Process P Li, YQ Ma, CH He, H Guo, Y Li, Y Guo, ZY Dong IEEE Transactions on Nuclear Science, 2023 | | 2023 |
| Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501 N Li, Y Li, Y Guo, C He Microelectronics Reliability 141, 114892, 2023 | | 2023 |
| Reliability Assessment of Nanoscale System on Chip Depending on Neturon Irradiation W Yang, L Yang, H Zhiliang, H Chaohui, J Cai, W Longsheng ELECTRONICS, 2023 | | 2023 |
| Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors J Wei, Y Li, W Liao, F Liu, Y Li, J Liu, C He, G Guo Chinese Physics B 31 (8), 086106, 2022 | | 2022 |
| Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation Y Li, W Yang, M Wang, Y Li, Y Guo, P Li, H Zhao, C He, D Wang, Y Yang, ... Microelectronics Reliability 133, 114534, 2022 | | 2022 |
Weitao YangPolitecnico di Torino, Xi'an Jiaotong UniversityVerified email at studenti.polito.it
