| High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2 X Wang, X Shi, C Gu, Q Guo, H Liu, X Li, Y Wu APL Materials 9 (7), 2021 | 9 | 2021 |
| Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration X Xiong, S Liu, H Liu, Y Chen, X Shi, X Wang, X Li, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2022 | 8 | 2022 |
| Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices X Li, X Shi, D Marian, D Soriano, T Cusati, G Iannaccone, G Fiori, Q Guo, ... Science Advances 9 (7), eade5706, 2023 | 7 | 2023 |
| Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics X Li, Z Zhang, T Gao, X Shi, C Gu, Y Wu Advanced Functional Materials 32 (46), 2208091, 2022 | 6 | 2022 |
| Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics X Shi, X Li, Q Guo, H Gao, M Zeng, Y Han, S Yan, Y Wu Nano Letters 22 (18), 7667-7673, 2022 | 6 | 2022 |
| Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors X Shi, X Li, Q Guo, M Zeng, X Wang, Y Wu Applied Physics Reviews 10 (1), 2023 | 4 | 2023 |
| High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 at μS/μm Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate X Shi, X Wang, S Liu, Q Guo, L Sun, X Li, R Huang, Y Wu 2022 International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2022 | 1 | 2022 |
| Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures X Wang, X Xiong, X Shi, C Gu, Y Wu Applied Physics Letters 123 (26), 2023 | | 2023 |
| BEOL Compatible High-Performance Monolayer WSe2 pFETs with Record Gm=190 μS/μm and Ion=350 μA/μm by Direct-Growth on SiO2 Substrate at Reduced … X Wang, X Shi, X Xiong, R Huang, Y Wu 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Ultrashort channel chemical vapor deposited bilayer WS X Shi, X Li, Q Guo | | 2023 |
