| High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt B Yuan, XJ Zheng, YQ Chen, B Yang, T Zhang Solid-State Electronics 55 (1), 49-53, 2011 | 59 | 2011 |
| Effect of hydrogen on defects of AlGaN/GaN HEMTs characterized by low-frequency noise YQ Chen, YC Zhang, Y Liu, XY Liao, YF En, WX Fang, Y Huang IEEE Transactions on Electron Devices 65 (4), 1321-1326, 2018 | 45 | 2018 |
| Photoconductive semiconductor switch based on ZnS nanobelts film XJ Zheng, YQ Chen, T Zhang, B Yang, CB Jiang, B Yuan, Z Zhu Sensors and Actuators B: Chemical 147 (2), 442-446, 2010 | 44 | 2010 |
| Analysis and simulation of low-frequency noise in indium-zinc-oxide thin-film transistors Y Liu, H He, R Chen, YF En, B Li, YQ Chen IEEE Journal of the Electron Devices Society 6, 271-279, 2018 | 36 | 2018 |
| Degradation behavior and mechanisms of E-mode GaN HEMTs with p-GaN gate under reverse electrostatic discharge stress YQ Chen, JT Feng, JL Wang, XB Xu, ZY He, GY Li, DY Lei, Y Chen, ... IEEE Transactions on Electron Devices 67 (2), 566-570, 2020 | 34 | 2020 |
| Effect of hot electron stress on AlGaN/GaN HEMTs of hydrogen poisoning J He, YQ Chen, ZY He, YF En, C Liu, Y Huang, Z Li, MH Tang IEEE Journal of the Electron Devices Society 7, 76-81, 2018 | 23 | 2018 |
| Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV bi ions irradiation ZF Lei, HX Guo, MH Tang, C Zeng, ZG Zhang, H Chen, YF En, Y Huang, ... Microelectronics Reliability 80, 312-316, 2018 | 20 | 2018 |
| Reliability investigations of AlGaN/GaN HEMTs based on on-state electroluminescence characterization C Zeng, YS Wang, XY Liao, RG Li, YQ Chen, P Lai, Y Huang, YF En IEEE Transactions on Device and Materials Reliability 15 (1), 69-74, 2014 | 19 | 2014 |
| Effects of surface tension and axis stress on piezoelectric behaviors of ferroelectric nanowires YQ Chen, YF En, Y Huang, XD Kong, XJ Zheng, YD Lu Applied Physics Letters 99 (20), 2011 | 17 | 2011 |
| Analysis of indium–zinc–oxide thin-film transistors under electrostatic discharge stress Y Liu, R Chen, B Li, YF En, YQ Chen IEEE Transactions on Electron Devices 65 (1), 356-360, 2017 | 15 | 2017 |
| Trap analysis based on low-frequency noise for SiC power MOSFETs under repetitive short-circuit stress JL Wang, YQ Chen, JT Feng, XB Xu, YF En, B Hou, R Gao, Y Chen, ... IEEE Journal of the Electron Devices Society 8, 145-151, 2020 | 13 | 2020 |
| Degradation mechanism of AlGaN/GaN HEMTs during high temperature operation stress YQ Chen, XY Liao, C Zeng, C Peng, Y Liu, RG Li, YF En, Y Huang Semiconductor Science and Technology 33 (1), 015019, 2017 | 13 | 2017 |
| Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs under electrostatic discharge stress XB Xu, B Li, YQ Chen, ZH Wu, ZY He, L Liu, SZ He, YF En, Y Huang IEEE Journal of the Electron Devices Society 9, 89-95, 2020 | 10 | 2020 |
| Effect of atmosphere on electrical characteristics of AlGaN/GaN HEMTs under hot-electron stress C Liu, YQ Chen, Y Liu, P Lai, ZY He, YF En, TY Wang, Y Huang IEEE Transactions on Electron Devices 68 (3), 1000-1005, 2021 | 8 | 2021 |
| Investigation of electrical properties of individual GaN nanowire‐based ferroelectric field effect transistor YQ Chen, XB Xu, YD Lu, X Wang, YF En physica status solidi (a) 212 (2), 390-393, 2015 | 8 | 2015 |
| Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based … XB Xu, B Li, YQ Chen, ZH Wu, ZY He, YF En, Y Huang Semiconductor Science and Technology 36 (2), 025014, 2020 | 7 | 2020 |
| A prognostic circuit for time-dependent dielectric breakdown failure of MOSFET YQ Chen, XB Xu, YD Lu, SJ Pan 2014 10th International Conference on Reliability, Maintainability and …, 2014 | 6 | 2014 |
| Thermal resistance measurement of packaged SiC MOSFETs by transient dual interface method T Yin, SJ Li, YQ Chen, XY Liao, RG Li, YF En, Y Huang 2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017 | 5 | 2017 |
| Design of prognostic circuit for electromigration failure of integrated circuit YQ Chen, B Wang, YF Zhang, YF En, Y Huang, YD Lu, LX Liu, XH Wang Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013 | 5 | 2013 |
| Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress XB Xu, B Li, YQ Chen, ZH Wu, ZY He, YF En, Y Huang Journal of Physics D: Applied Physics 53 (17), 175101, 2020 | 4 | 2020 |
