| A drain–source connection technique: Thermal resistance measurement method for GaN HEMTs using TSEP at high voltage X Li, S Feng, C Liu, Y Zhang, K Bai, Y Xiao, X Zheng, X He, S Pan, G Lin, ... IEEE Transactions on Electron Devices 67 (12), 5454-5459, 2020 | 17 | 2020 |
| A voltage-transient method for characterizing traps in GaN HEMTs X Zheng, S Feng, Y Gao, Y Zhang, Y Jia, S Pan Microelectronics Reliability 93, 57-60, 2019 | 11 | 2019 |
| Identifying the properties of traps in GaN high-electron-mobility transistors via amplitude analysis based on the voltage-transient method S Pan, S Feng, X Li, X Zheng, X Lu, X He, K Bai, Y Zhang, L Zhou IEEE Transactions on Electron Devices 68 (11), 5541-5546, 2021 | 9 | 2021 |
| Evidence of GaN HEMT Schottky gate degradation after gamma irradiation X Zheng, S Feng, C Peng, G Lin, L Bai, X Li, Y Yang, S Pan, Z Hu, X Li, ... IEEE Transactions on Electron Devices 66 (9), 3784-3788, 2019 | 9 | 2019 |
| Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method S Pan, S Feng, X Li, K Bai, X Lu, Y Li, Y Zhang, L Zhou, M Zhang Applied Physics Letters 121 (15), 2022 | 8 | 2022 |
| Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions D Zhao, C Guo, Y Li, S Pan, S Feng, H Zhu Microelectronics Reliability 140, 114880, 2023 | 5 | 2023 |
| Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy S Pan, S Feng, X Li, K Bai, X Lu, Y Zhang, L Zhou, E Rui, Q Jiao, Y Tian Semiconductor Science and Technology 37 (9), 095017, 2022 | 5 | 2022 |
| Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method S Pan, S Feng, X Li, X Zheng, X Lu, C Hu, X He, K Bai, L Zhou, Y Zhang Semiconductor Science and Technology 36 (9), 095011, 2021 | 5 | 2021 |
| Build-in compact and efficient temperature sensor array on field programmable gate array S Wang, S Feng, Y Xiao, C Hu, S Pan Microelectronics Journal 111, 105018, 2021 | 5 | 2021 |
| Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method Y Li, H Zhu, X Liu, X Wang, H Xu, S Pan, J Xiang, L Zhou, Z Yao, Y Sun, ... Applied Physics Letters 122 (11), 2023 | 4 | 2023 |
| Identification of traps in p-GaN gate HEMTs during OFF-state stress by current transient method S Pan, S Feng, X Li, K Bai, X Lu, J Zhu, Y Zhang, L Zhou IEEE Transactions on Electron Devices 69 (9), 4877-4882, 2022 | 4 | 2022 |
| Analysis of the effects of high-energy electron irradiation of GaN high-electron-mobility transistors using the voltage-transient method S Pan, S Feng, X Li, X Zheng, X Lu, C Hu, G Shao, G Lin IEEE Transactions on Electron Devices 68 (8), 3968-3973, 2021 | 4 | 2021 |
| Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation C Guo, S Cui, W Tsai, Y Liu, J Ding, J Li, Z Chen, Y Li, S Pan, S Feng IEEE Transactions on Electron Devices 70 (4), 1776-1781, 2023 | 3 | 2023 |
| Effects of temperature and bias voltage on electron transport properties in GaN high-electron-mobility transistors S Pan, S Feng, X Zheng, X He, X Li, K Bai IEEE Transactions on Device and Materials Reliability 21 (4), 494-499, 2021 | 3 | 2021 |
| Effect of high-and low-side blocking on short-circuit characteristics of SiC MOSFET K Bai, S Feng, X Zheng, X He, S Pan, X Li Microelectronics Reliability 123, 114227, 2021 | 3 | 2021 |
| A numerical calibration of structure-function transient thermal measurement based on Cauer RC network K Bai, S Feng, X Li, S Pan, X Lu, Z Feng, Y Zhang Microelectronics Journal 135, 105742, 2023 | 2 | 2023 |
| A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor X Li, S Feng, Z Feng, S Pan, Y Lv, K Bai, X Lu, J Qin, Y Zhang Applied Physics Letters 122 (7), 2023 | 2 | 2023 |
| Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters X Li, S Feng, Z Feng, Y Lv, Y Wang, X He, K Bai, S Pan Semiconductor Science and Technology 36 (11), 115010, 2021 | 2 | 2021 |
| Temperature distribution measurement for chips based on FPGA WJ Yu, SW Feng, SJ Pan, YM Zhang, BB Shi 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 2 | 2018 |
| A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe C Hu, S Feng, Y Zhang, X He, K Bai, S Wang, S Pan Review of Scientific Instruments 92 (8), 2021 | 1 | 2021 |
Xuan LiBeijing University of TechnologyVerified email at emails.bjut.edu.cn
