| Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN E Gaubas, T Ceponis, A Jasiunas, V Kovalevskij, D Meskauskaite, ... Applied Physics Letters 104 (6), 2014 | 24 | 2014 |
| Study of neutron irradiated structures of ammonothermal GaN E Gaubas, T Ceponis, L Deveikis, D Meskauskaite, S Miasojedovas, ... Journal of Physics D: Applied Physics 50 (13), 135102, 2017 | 15 | 2017 |
| Profiling of current transients in capacitor type diamond sensors E Gaubas, T Ceponis, D Meskauskaite, N Kazuchits Sensors 15 (6), 13424-13458, 2015 | 10 | 2015 |
| In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS E Gaubas, I Brytavskyi, T Ceponis, A Jasiunas, V Kalesinskas, ... Journal of Applied Physics 115 (24), 2014 | 10 | 2014 |
| Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes E Gaubas, T Ceponis, L Deveikis, D Meskauskaite, J Pavlov, ... Materials Science in Semiconductor Processing 75, 157-165, 2018 | 9 | 2018 |
| Electrical characterization of HVPE GaN containing different concentrations of carbon dopants E Gaubas, T Čeponis, L Deveikis, D Meskauskaite, J Pavlov, ... Semiconductor Science and Technology 33 (12), 125024, 2018 | 7 | 2018 |
| Study of recombination characteristics in MOCVD grown GaN epi-layers on Si E Gaubas, T Ceponis, D Dobrovolskas, T Malinauskas, D Meskauskaite, ... Semiconductor Science and Technology 32 (12), 125014, 2017 | 7 | 2017 |
| Study of charge carrier transport in gan sensors E Gaubas, T Ceponis, E Kuokstis, D Meskauskaite, J Pavlov, I Reklaitis Materials 9 (4), 293, 2016 | 7 | 2016 |
| Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors E Gaubas, D Bajarūnas, T Čeponis, D Meškauskaitė, J Pavlov Lithuanian Journal of Physics 53 (4), 2013 | 6 | 2013 |
| Comparative study of deep levels in HVPE and MOCVD GaN by combining O-DLTS and pulsed photo-ionization spectroscopy J Pavlov, T Čeponis, E Gaubas, D Meskauskaite, I Reklaitis, J Vaitkus, ... Journal of Instrumentation 10 (12), C12015, 2015 | 5 | 2015 |
| Anneal induced transforms of radiation defects in heavily electron irradiated Si diodes V Rumbauskas, D Meskauskaite, T Ceponis, E Gaubas Journal of Instrumentation 11 (09), P09004, 2016 | 3 | 2016 |
| Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN E Gaubas, T Ceponis, J Pavlov, A Jasiunas, V Jonkus, D Meskauskaite, ... Journal of Instrumentation 9 (12), C12044, 2014 | 3 | 2014 |
| Spectroscopy of defects in HPHT and CVD diamond by ESR and pulsed photo-ionization measurements E Gaubas, T Ceponis, D Meskauskaite, R Grigonis, V Sirutkaitis Journal of Instrumentation 11 (01), C01017, 2016 | 1 | 2016 |
| Comparative Study of Current Transients in HPHT and CVD Diamond Capacitor-Sensors E Gaubas, T Ceponis, D Meskauskaite, E Simoen ECS Journal of Solid State Science and Technology 5 (4), P3101, 2016 | 1 | 2016 |
| Commissioning of new facility equipment B B Gkotse, G Beck, A Uleckas, E Gaubas, J Pavlov, D Meškauskaitė, ... | 1 | 2015 |
| Spectroscopy of defects in wide band-gap semiconductors and heavily irradiated Si D Meškauskaitė Vilniaus universitetas, 2018 | | 2018 |
| Defektų spektroskopija plačiatarpiuose puslaidininkiuose ir stipriai apšvitintame Si D Meškauskaitė Vilniaus universitetas, 2018 | | 2018 |
| Anneal induced transforms of radiation defects in heavily irradiated Si detectors D Meskauskaite, T Ceponis, E Gaubas, V Rumbauskas, J Vaitkus Verhandlungen der Deutschen Physikalischen Gesellschaft, 2017 | | 2017 |
| Spectroscopy of Technological Defects in Si Solar Cells by Analysis of Temperature Dependent Generation Currents J Pavlov, D BAJARŪNAS, T ČEPONIS, E Gaubas, D MEŠKAUSKAITĖ Materials Science 20 (3), 252-255, 2014 | | 2014 |
| CHARACTERISTICS OF 1.6 MeV PROTON-IRRADIATED GaN-BASED SENSORS D Meskauskaite, E Gaubas, T Ceponis, J Pavlov, V Rumbauskas | | |
