| Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure K Tomioka, H Gamo, J Motohisa, T Fukui 2020 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2020 | 8 | 2020 |
| Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si H Gamo, K Tomioka IEEE Electron Device Letters 41 (8), 1169-1172, 2020 | 8 | 2020 |
| Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application H Gamo, K Tomioka Journal of Crystal Growth 500, 58-62, 2018 | 7 | 2018 |
| Vertical Tunnel FET Technologies Using III-V/Si Heterojunction K Tomioka, H Gamo, J Motohisa ECS Transactions 92 (4), 71, 2019 | 4 | 2019 |
| Selective-Area Growth of AlInAs Nanowires Y Tai, H Gamo, J Motohisa, K Tomioka ECS Transactions 98 (6), 149, 2020 | | 2020 |
| Demonstration of InAs nanowire vertical transistors H Gamo, J Motohisa, K Tomioka 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
| Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs K Tomioka, A Yoshida, H Gamo 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
Katsuhiro TomiokaHokkaido University / Associate ProfessorVerified email at rciqe.hokudai.ac.jp
