| Optimization of 1700-V 4H-SiC Semisuperjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization GWC Baker, PM Gammon, AB Renz, O Vavasour, CW Chan, Y Qi, T Dai, ... IEEE Transactions on Electron Devices, 2022 | 11 | 2022 |
| Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications AB Renz, F Li, OJ Vavasour, PM Gammon, T Dai, GWC Baker, F La Via, ... Semiconductor Science and Technology 36 (5), 055006, 2021 | 5 | 2021 |
| A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices T Dai, L Zhang, O Vavasour, AB Renz, VA Shah, M Antoniou, PA Mawby, ... IEEE Transactions on Electron Devices 68 (3), 1162-1167, 2021 | 4 | 2021 |
| Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance L Zhang, T Dai, PM Gammon, VA Shah, PA Mawby, M Antoniou Power Electronic Devices and Components, 100031, 2022 | 2 | 2022 |
| A 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022 | 2 | 2022 |
| A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices T Dai, L Zhang, O Vavasour, AB Renz, Q Cao, VA Shah, PA Mawby, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| Optimization of SiC device topologies for Single Event Immunity Y Qi, M Antoniou, GWC Baker, AB Renz, L Zhang, PM Gammon 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET L Zhang, T Dai, P Gammon, V Shah, P Mawby, M Antoniou 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 1 | 2022 |
| Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design LY Zhang, TX Dai, PM Gammon, N Lophitis, F Udrea, A Tiwari, ... Materials Science Forum 1062, 504-508, 2022 | 1 | 2022 |
| The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor Q Cao, PM Gammon, AB Renz, L Zhang, G Baker, M Antoniou, N Lophitis 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | | 2022 |
| A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation GWC Baker, F Li, TX Dai, AB Renz, LY Zhang, YY Qi, VA Shah, ... Materials Science Forum 1062, 514-518, 2022 | | 2022 |
| Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET TX Dai, AB Renz, L Zhang, OJ Vavasour, GWC Baker, VA Shah, ... Materials Science Forum 1004, 808-813, 2020 | | 2020 |
Peter GammonUniversity of WarwickVerified email at warwick.ac.uk
